STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/DPAK TO-220FP
V
DS
Drain-source voltage (V
GS
= 0)
1000 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C
2.5
2.5
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100°C
1.57
1.57
(2)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 10
10
(2)
A
P
TOT
Total dissipation at T
C
= 25°C
90 25 W
Derating factor 0.72 0.2 W/°C
V
ESD(G-S)
Gate source ESD (HBM-C=100pF, R=1.5KΩ) 3000 V
dv/dt
(3)
3. I
SD
≤ 2.5A, di/dt ≤ 200A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;T
C
=25°C)
-- 2500 V
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220/DPAK TO-220FP
Rthj-case Thermal resistance junction-case max 1.39 5 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 °C/W
T
L
Maximum lead temperature for soldering purpose 300
Table 4. Avalanche data
Symbol Parameter Value Unit
I
AR
(1)
1. Pulse width limited by Tjmax
Avalanche current, repetitive or not-repetitive 2.5 A
E
AS
(2)
2. Starting Tj = 25°C, I
D
= I
AR
, V
DD
= 50V
Single pulse avalanche energy 110 mJ
