STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical characteristics
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Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 500V, I
D
= 1.25A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 16)
15
7.5
ns
ns
t
d(off)
t
r
Turn-off delay time
Fall time
V
DD
= 500V, I
D
= 1.25A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 16)
39
32
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by package
Source-drain current
Source-drain current
(pulsed)
2.5
10
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 2.5A, V
GS
=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 2.5A, di/dt = 100A/µs,
V
DD
= 100V, Tj= 25°C
(see Figure 21)
584
2.3
8
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 2.5A, di/dt = 100A/µs,
V
DD
= 100V, Tj=150°C
(see Figure 21)
628
2.5
8.1
ns
µC
A
Table 9. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
(1)
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
Gate-source breakdown
voltage
I
GS
= ±1mA (open drain)
30 V
