IRFR010, SiHFR010
www.vishay.com
Vishay Siliconix
S13-0167-Rev. B, 04-Feb-13
1
Document Number: 91420
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Low Drive Current
• Surface Mount
• Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFET’s to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9012, SiHFR9012 is provided on 16 mm tape.
The straight lead option IRFU9012, SiHFU9012 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, dc-to-dc converters, and a
wide range of consumer products.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 100 μH, R
g
= 25 .
c. I
SD
8.2 A, dI/dt 130 A/μs, V
DD
40 V, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 50
R
DS(on)
()V
GS
= 10 V 0.20
Q
g
(Max.) (nC) 10
Q
gs
(nC) 2.6
Q
gd
(nC) 4.8
Configuration Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
S
D
G
ORDERING INFORMATION
Package DPAK (TO-252)
Lead (Pb)-free
IRFR010PbF
SiHFR010-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
50
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
8.2
A
T
C
= 100 °C 5.2
Pulsed Drain Current
a
I
DM
33
Avalanche Current
b
I
AS
1.5
Linear Derating Factor 0.20 W/°C
Maximum Power Dissipation T
C
= 25 °C P
D
25 W
Peak Diode Recovery dV/dt
c
dV/dt 2.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
