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Document Number: 74460
S-80436-Rev. B, 03-Mar-08
Vishay Siliconix
SiA811DJ
New Product
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET)
b, f
t ≤ 5 s
R
thJA
52 65
°C/W
Maximum Junction-to-Case (Drain) (MOSFET)
Steady State
R
thJC
12.5 16
Maximum Junction-to-Ambient (Schottky)
b, f
t ≤ 5 s
R
thJA
62 76
Maximum Junction-to-Case (Drain) (Schottky)
Steady State
R
thJC
15 18.5
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 16.2
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
2.1
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.4 - 1 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≤ 5 V, V
GS
= - 4.5 V - 8 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 2.8 A
0.078 0.094
Ω
V
GS
= - 2.5 V, I
D
= - 2.3 A
0.109 0.131
V
GS
= - 1.8 V, I
D
= - 0.54 A
0.153 0.185
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 2.8 A
7S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
355
pFOutput Capacitance
C
oss
75
Reverse Transfer Capacitance
C
rss
50
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 4.5 A
8.5 13
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 4.5 A
4.9 7.4
Gate-Source Charge
Q
gs
0.75
Gate-Drain Charge
Q
gd
1.2
Gate Resistance
R
g
f = 1 MHz 8 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 2.2 Ω
I
D
≅ - 4.5 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
10 15
ns
Rise Time
t
r
35 55
Turn-Off DelayTime
t
d(off)
40 60
Fall Time
t
f
50 75
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 2.2 Ω
I
D
≅ - 4.5 A, V
GEN
= - 8 V, R
g
= 1 Ω
510
Rise Time
t
r
10 15
Turn-Off DelayTime
t
d(off)
20 30
Fall Time
t
f
10 15
