SIA811DJ-T1-GE3

Vishay Siliconix
SiA811DJ
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
www.vishay.com
7
New Product
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
0.1
0.01
Normalized E
f
f
ective T ransient
Thermal Impedance
10
-3
10
-2
1 10 1000 10
-1
10
-4
100
Square Wave Pulse Duration (s)
Single Pulse
0.02
0.05
0.1
0.2
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
th JA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
th JA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
1
0.01
Square Wave Pulse Duration (s)
Normalized E
f
f
ective T ransient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
www.vishay.com
8
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
Vishay Siliconix
SiA811DJ
New Product
SCHOTTKY TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Reverse Current vs. Junction Temperature
0.00001
0.0001
0.001
0.01
0.1
1
- 50 - 25 0 25 50
T
J
- Junction Temperature (°C)
I
F
- Reverse Current (mA)
150
125
100
75
100
10
20 V
5 V
Forward Voltage Drop
0.01
0.10
1
10
0.0 0.1 0.2 0.3 0.4 0.5
V
F
- Forward Voltage Drop (V)
)A( tnerruC drawroF -I
F
T
J
= 25 °C
T = 150 °C
J
Capacitance
)Fp( ecnaticap
a
C
noit
c
nuJ
-
0
60
120
180
240
300
048 12 16 20
V
RS
- Reverse Voltage (V)
C
T
Vishay Siliconix
SiA811DJ
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
www.vishay.com
9
New Product
SCHOTTKY TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74460.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
1
Single Pulse
0.05
0.02
0.1
0.2
10
-3
10
-2
10
-1

SIA811DJ-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SIA811ADJ-GE3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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