APT35GP120B2DQ2G Datasheet APT35GP120B2DQ2G | P1-P3

050-7630 Rev A 11-2005

APT35GP120B2DQ2(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 350µA)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 1mA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 35A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 35A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±20V)

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

RBSOA

P

D

T

J

,T

STG

T

L

APT35GP120B2DQ2(G)

1200

±30

96

46

140

140A @ 960V

543

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

Reverse Bias Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

APT Website - http://www.advancedpower.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

1200

3 4.5 6

3.3 3.9

3

350

3000

±100

The POWER MOS 7

®

IGBT is a new generation of high voltage power IGBTs. Using Punch

Through Technology this IGBT is ideal for many high frequency, high voltage switching

applications and has been optimized for high frequency switchmode power supplies.

• Low Conduction Loss • RBSOA Rated

• Low Gate Charge

• Ultrafast Tail Current shutoff

POWER MOS 7

®

IGBT

1200V

APT35GP120B2DQ2

APT35GP120B2DQ2G*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

®

C

E

G

T-Max

®

G

C

E

050-7630 Rev A 11-2005

APT35GP120B2DQ2(G)

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

MIN TYP MAX

.23

.61

5.9

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

R

θ

JC

R

θ

JC

W

T

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

RBSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1 MHz

Gate Charge

V

GE

= 15V

V

CE

= 600V

I

C

= 35A

T

J

= 150°C, R

G

= 4.3Ω, V

GE

=

15V, L = 100µH,V

CE

= 960V

Inductive Switching (25°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 35A

R

G

= 4.3Ω

T

J

= +25°C

Inductive Switching (125°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 35A

R

G

= 4.3Ω

T

J

= +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge

3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Reverse Bias Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

5

Turn-off Switching Energy

6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

55

Turn-off Switching Energy

6

MIN TYP MAX

3240

250

31

7.5

150

21

60

140

16

20

95

40

750

1305

680

16

20

145

75

750

2130

1745

UNIT

pF

V

nC

A

ns

µJ

ns

µJ

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

For Combi devices, I

ces

includes both IGBT and FRED leakages

3

See MIL-STD-750 Method 3471.

4

E

on1

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁgure 21, but with a Silicon Carbide diode.

5

E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6

E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the speciﬁcations and information contained h

050-7630 Rev A 11-2005

APT35GP120B2DQ2(G)

TYPICAL PERFORMANCE CURVES

BV

CES

, COLLECTOR-TO-EMITTER BREAKDOWN V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

VOLTAGE (NORMALIZED)

I

C,

DC COLLECTOR CURRENT(A) V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) V

GE

, GATE-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A)

250µs PULSE

TEST<0.5 % DUTY

CYCLE

80

70

60

50

40

30

20

10

0

120

100

80

60

40

20

0

6

5

4

3

2

1

0

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

80

70

60

50

40

30

20

10

0

16

14

12

10

8

6

4

2

0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

140

120

100

80

60

40

20

0

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

V

GE

= 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

T

J

= 125°C

T

J

= 25°C

T

J

= 125°C

T

J

= 25°C

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V) V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(T

J

= 25°C) FIGURE 2, Output Characteristics (T

J

= 125°C)

V

GE

, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V) T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5

0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160

6 8 10 12 14 16 0 25 50 75 100 125

-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150

I

C

= 35A

T

J

= 25°C

V

CE

= 960V

V

CE

= 600V

V

CE

= 240V

I

C

= 70A

I

C

= 35A

I

C

= 17.5A

I

C

= 70A

I

C

= 35A

I

C

= 17.5A

Lead Temperature

Limited

APT35GP120B2DQ2G

APT35GP120B2DQ2G

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