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APT35GP120B2DQ2G

P1-P3P4-P6P7-P9
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 112°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 35A
Forward Voltage I
F
= 70A
I
F
= 35A, T
J
= 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN TYP MAX
2.7
3.28
2.07
APT35GP120B2DQ2(G)
40
63
210
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN TYP MAX
- 26
- 350
- 570
- 4 -
-
430
- 2200
-
9 -
- 210
- 3400
- 29
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 40A, di
F
/dt = -200A/µs
V
R
= 800V, T
C
= 25°C
I
F
= 40A, di
F
/dt = -200A/µs
V
R
= 800V, T
C
= 125°C
I
F
= 40A, di
F
/dt = -1000A/µs
V
R
= 800V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/µs, V
R
= 30V, T
J
= 25°C
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
D = 0.9
0.0442
0.242
0.324
0.00222
0.00586
0.0596
Power
(watts)
Junction
temp (°C)
RC MODEL
Case temperature (°C)
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
T
J
= 125°C
V
R
= 800V
20A
40A
80A
600
500
400
300
200
100
0
35
30
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175°C
80
70
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/
µs)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature Figure 30. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 25. Forward Current vs. Forward Voltage Figure 26. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs) -di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change Figure 28. Reverse Recovery Current vs. Current Rate of Change
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC)
(A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0 1 2 3 4 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
T
J
= 125°C
V
R
= 800V
80A
20A
40A
120
100
80
60
40
20
0
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
T
J
= 125°C
V
R
= 800V
80A
40A
20A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
150
100
50
0
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
APT10035LLL
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
e1
SAC: Tin, Silver, Copper
T-MAX
®
(B2) Package Outline
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitte
Gate
Collector
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
t
rr
- Reverse
R
ecovery Time, measured from zero crossing where
diode
Q
rr
- Area Under the Curve Defined by I
RRM
and t
rr
.
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 I
RRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30µH
D.U.T.
+18V
0V
V
r
t
rr
/
Q
rr
Waveform
P1-P3P4-P6P7-P9

APT35GP120B2DQ2G

Mfr. #:
Buy APT35GP120B2DQ2G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS
Lifecycle:
New from this manufacturer.
Delivery:
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