IXGN60N60C2D1 Datasheet IXGN60N60C2, IXGN60N60C2D1 | P1-P3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

650 μA

V

GE

= 0V T

J

= 125°C 5 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 50A, V

GE

= 15V, Note 1 2.1 2.5 V

T

J

= 125°C 1.8 V

HiPerFAST

TM

IGBTs

with Diode

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1 MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Limited by Leads) 75 A

I

C110

T

C

= 110°C 60 A

I

CM

T

C

= 25°C, 1 ms 300 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 10 Ω I

CM

= 100 A

(RBSOA) Clamped Inductive Load @ V

CE

≤ 600 V

P

C

T

C

= 25°C 480 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

V

ISOL

50/60 Hz t = 1 min 2500 V~

I

ISOL

≤ 1 mA t = 1 s 3000 V~

M

d

Mounting Torque 1.5/13 Nm/lb.in.

Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in.

Weight 30 g

DS99177A(01/09)

IXGN60N60C2

IXGN60N60C2D1

C2-Class High Speed IGBTs

Features

z

International Standard Package

miniBLOC

z

Aluminium Nitride Isolation

- High Power Dissipation

z

Anti-Parallel Ultra Fast Diode

z

Isolation Voltage 3000 V~

z

Low V

CE(sat)

for Minimum On-State

Conduction Losses

z

MOS Gate Turn-on

- Drive Simplicity

z

Low Collector-to-Case Capacitance

(< 50 pF)

z

Low Package Inductance (< 5 nH)

- Easy to Drive and to Protect

Applications

z

AC Motor Speed Control

z

DC Servo and Robot Drives

z

DC Choppers

z

Uninterruptible Power Supplies (UPS)

z

Switch-Mode and Resonant-Mode

Power Supplies

Advantages

z

Easy to Mount with 2 Screws

z

Space Savings

z

High Power Density

V

CES

= 600V

I

C110

= 60A

V

CE(sat)

≤≤

≤ 2.5V

t

rr

= 35ns

SOT-227B, miniBLOC

G = Gate, C = Collector, E = Emitter

c Either Emitter Terminal can be used as

Main or Kelvin Emitter

G

Ec

C

E153432

E

60C2D160C2

IXGN60N60C2

IXGN60N60C2D1

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

SOT-227B miniBLOC

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 50A, V

CE

= 10V, Note 1 40 58 S

C

ies

4750 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 530 pF

C

res

65 pF

Q

g

146 nC

Q

ge

I

C

= 50A, V

GE

= 15V, V

CE

= 0.5 • V

CES

28 nC

Q

gc

50 nC

t

d(on)

18 ns

t

ri

25 ns

t

d(off)

95 150 ns

t

fi

35 ns

E

off

0.48 0.80 mJ

t

d(on)

18 ns

t

ri

25 ns

E

on

0.90 mJ

t

d(off)

130 ns

t

fi

80 ns

E

off

1.20 mJ

R

thJC

0.26 °C/W

R

thCS

0.05 °C/W

Inductive load, T

J

= 125°C

I

C

= 50A, V

GE

= 15V

V

CE

= 400V, R

G

= 2Ω

Inductive load, T

J

= 25°C

I

C

= 50A, V

GE

= 15 V

V

CE

= 400V, R

G

= 2Ω

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Oherwise Specified) Min. Typ. Max.

V

F

2.1 V

1.4 V

I

RM

8.3 A

t

rr

35 ns

R

thJC

0.85 °C/W

I

F

= 60A, V

GE

= 0V, Note 1

T

J

= 150°C

I

F

= 60A, -di/dt = 100A/μs, T

J

= 100°C

V

R

= 100V, V

GE

= 0V,

I

F

= 1A, -di/dt = 200A/μs, V

R

= 30V,V

GE

= 0V

Note 1: PulseTest, t ≤ 300μs, Duty Cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXGN60N60C2

IXGN60N60C2D1

Fig. 2. Extended Output Characteristics

@ 25 deg. C

0

25

50

75

10 0

12 5

15 0

17 5

200

11.5 22.533.544.5

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 5V

1 3V

1 1V

9V

5V

7V

Fig. 3. Output Characteristics

@ 125 Deg. C

0

10

20

30

40

50

60

70

80

90

10 0

0.5 1 1.5 2 2.5 3 3.5

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 5V

1 3V

1 1V

5V

7V

9V

Fig. 1. Output Characteristics

@ 25 Deg. C

0

10

20

30

40

50

60

70

80

90

10 0

0.5 1 1.5 2 2.5 3 3.5

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 5V

1 3V

1 1V

7V

5V

9V

Fig. 6. Input Admittance

0

25

50

75

10 0

12 5

15 0

17 5

200

3.544.555.566.577.588.5

V

GE

- Volts

I

C

- Amperes

T

J

= 1 25

º

C

25

º

C

-40

º

C

Fig. 4. Temperature Dependence of V

CE(sat)

0.5

0.6

0.7

0.8

0.9

1

1. 1

1. 2

25 50 75 100 125 150

T

J

- Degrees Centigrade

V

C E (sat)

- Normalize

d

I

C

= 1 00A

I

C

= 50A

I

C

= 25A

V

G E

= 1 5V

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

1

1.5

2

2.5

3

3.5

4

4.5

5

5 6 7 8 9101112131415

V

GE

- Volts

V

CE

- Volts

T

J

= 25

º

C

I

C

= 1 00A

50A

25A

IXGN60N60C2D1

IXGN60N60C2D1

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