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IXGN60N60C2D1

P1-P3P4-P5
IXGN60N60C2
IXGN60N60C2D1
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
Fig. 12. Capacitance
10
10 0
10 0 0
10 0 0 0
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 11. Gate Charge
0
3
6
9
12
15
0 20406080100120140160
Q
G
- nanoCoulombs
V
G E
- Volts
V
C E
= 300V
I
C
= 50A
I
G
= 1 0mA
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
10 0
0 25 50 75 100 125 150 175 200
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
1 25
º
C
Fig. 8. Dependence of E
off
on R
G
0
1
2
3
4
5
6
246810121416
R
G
- Ohms
E
off
- milliJoule
s
I
C
= 75A
I
C
= 25A
T
J
= 1 25
º
C
V
GE
= 1 5V
V
CE
= 400V
I
C
= 50A
I
C
= 1 00A
Fig. 9. Dependence of E
off
on I
C
0
1
2
3
4
5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoule
s
R
G
= 2 Ohms
R
G
= 1 0 Ohms - - - - -
T
J
= 1 25
º
C
V
G E
= 1 5V
V
C E
= 400V
T
J
= 25
º
C
Fig. 10. Dependence of E
off
on Temperature
0
1
2
3
4
5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- milliJoule
s
I
C
= 1 00A
I
C
= 50A
I
C
= 25A
V
G E
= 1 5V
V
C E
= 400V
R
G
= 2 Ohms
R
G
= 1 0 Ohms - - - - -
I
C
= 75A
Fig. 12. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
IXYS REF: G_60N60C2(7Y)12-11-08-A
© 2009 IXYS CORPORATION, All Rights Reserved
IXGN60N60C2
IXGN60N60C2D1
200 600 10000 400 800
80
90
100
110
120
130
140
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
V
FR
di
F
/dt
V
200 600 10000 400 800
0
20
40
60
80
100 1000
0
1000
2000
3000
4000
012
0
20
40
60
80
100
120
140
160
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/μs
A
V
nC
A/μs
A/μs
t
rr
ns
t
fr
A/μs
μs
DSEP 2x61-06A
Z
thJC
Fig. 27. Maximum Transient Thermal Impeadance Juection to Case (for Diode)
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 150°C
100°C
25°C
I
F
= 120A, 60A, 30A
I
RM
Q
RM
I
F
= 30A, 60A, 120A
T
VJ
= 100°C
V
R
= 300V
t
rr
V
FR
I
F
= 120A, 60A, 30A
T
VJ
= 100°C
I
F
= 60A
Fig. 13. Forward Current I
F
Versus V
F
Fig. 15. Peak Reverse Current I
RM
Versus -di
F
/dt
Fig. 14. Reverse Recorvery Charge Q
r
Versus -di
F
/dt
Fig. 18. Peak Forward Voltage V
RM
and t
rr
Versus -di
F
/dt
Fig. 17. Recorvery Time t
rr
Versus
-di
F
/dt
Fig. 16. Dynamic Paraments Q
r,
I
RM
Versus T
vJ
Fig. 27. Maximum Transient Thermal Impedance (for diode)
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width [ s ]
Z
(th)JC
[ ºC / W ]
P1-P3P4-P5

IXGN60N60C2D1

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IGBT 600V 75A SOT-227B
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