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VS-ST083S08PFN1P

P1-P3P4-P6P7-P9P10-P10
VS-ST083SP Series
www.vishay.com
Vishay Semiconductors
Revision: 06-Feb-17
4
Document Number: 94334
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
ST083S Series
R
thJC
(DC) = 0.195 K/W
110
100
90
80
130
030
60
90
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
10 40 7020 50 80
120
30° 60° 90° 120° 180°
Ø
Conduction angle
ST083S Series
R
thJC
(DC) = 0.195 K/W
110
100
90
70
130
060
120
140
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
20 8040 100
120
30°
60°
90°
120°
180°
80
DC
Ø
Conduction period
0
20
40
60
80
100
120
140
160
180
0 102030405060708090
180°
120°
90°
60°
30°
RMS limit
Conduction angle
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
ST083S Series
T
J
= 125 °C
Ø
Maximum Allowable Ambient Temperature (°C)
0
20
25 50 75 100 125
40
60
80
100
120
140
160
180
Maximum Average On-State
Power Loss (W)
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
50
20 40 60 80 100 120 1400
100
150
200
250
DC
180°
120°
90°
60°
30°
RMS limit
Conduction period
Maximum Average On-State
Power Loss (W)
ST083S Series
T
J
= 125 °C
Average On-State Current (A)
Ø
Maximum Average On-State
Power Loss (W)
0
50
100
150
200
250
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
VS-ST083SP Series
www.vishay.com
Vishay Semiconductors
Revision: 06-Feb-17
5
Document Number: 94334
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
1000
1 10 100
1200
1400
1600
1800
2000
2200
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave On-State Current (A)
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
ST083S Series
At any rated load condition and with
rated V
RRM
applied following surge
1000
0.01 0.1 1
1200
1400
1600
1800
2000
2200
2400
2600
Pulse Train Duration (s)
Peak Half Sine Wave On-State Current (A)
ST083S Series
Maximum non repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
1000
10 000
T
J
= 25 °C
T
J
= 125 °C
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST083S Series
20
2010 30 40 50 60 70 80 90 100
40
60
80
100
120
140
160
ST083S Series
T
J
= 125 °C
dI/dt - Rate of Fall of On-State Current (A/µs)
Q
rr
- Maximum Reverse Recovery
Charge (µC)
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 100 A
I
TM
= 50 A
I
TM
= 200 A
10
20
30
40
50
60
70
80
90
100
110
120
I
rr
- Maximum Reverse Recovery
Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
ST083S Series
T
J
= 125 °C
2010 30 40 50 60 70 80 90 100
I
TM
= 500 A
I
TM
= 50 A
I
TM
= 200 A
I
TM
= 300 A
I
TM
= 100 A
VS-ST083SP Series
www.vishay.com
Vishay Semiconductors
Revision: 06-Feb-17
6
Document Number: 94334
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
10
10 100 1000 10 000
100
1000
10 000
400
2500
100
Pulse Basewidth (µs)
Peak On-State Current (A)
1000
1500
2000
3000
200
500
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
50 Hz
t
p
ST083S Series
Sinusoidal pulse
T
C
= 60 °C
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
t
p
ST083S Series
Sinusoidal pulse
T
C
= 85 °C
400
2500
100
1000
1500
2000
3000
500
50 Hz
200
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
ST083S Series
Trapezoidal pulse
T
C
= 60 °C
dI/dt = 50 A/µs
t
p
400
2500
100
1000
1500
2000
3000
200
500
50 Hz
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
2500
100
1000
1500
2000
200
500
50 Hz
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
ST083S Series
Trapezoidal pulse
T
C
= 85 °C
dI/dt = 50 A/µs
t
p
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
2500
3000
100
1000
1500
2000
200
500
50 Hz
ST083S Series
Trapezoidal pulse
T
C
= 60 °C
dI/dt = 100 A/µs
t
p
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
2500
100
1000
1500
2000
200
500
50 Hz
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
ST083S Series
Trapezoidal pulse
T
C
= 85 °C
dI/dt = 100 A/µs
t
p
P1-P3P4-P6P7-P9P10-P10

VS-ST083S08PFN1P

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Buy VS-ST083S08PFN1P
Manufacturer:
Vishay Semiconductors
Description:
SCRs 135 Amp 800 Volt 135 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
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