VS-ST083SP Series
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Vishay Semiconductors
Revision: 06-Feb-17
7
Document Number: 94334
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Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
Pulse Basewidth (µs)
20 joules per pulse
1
0.5
0.3
0.2
10
5
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
t
p
ST083S Series
Sinusoidal pulse
0.1
3
2
Pulse Basewidth (µs)
20 joules
per pulse
0.1
t
p
10 100 1000 10 000
0.2
0.3
0.5
1
2
4
7.5
Peak On-State Current (A)
10
100
1000
10 000
ST083S Series
Rectangular pulse
dI/dt = 50 A/µs
0.1
1
10
100
0.001
V
GD
I
GD
(b)
(a)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 40 °C
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
(3)
Device: ST083S Series
(4)
Frequency limited by P
G(AV)
0.01 0.1 1 10 100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
r
≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r
≤ 1 µs
(1) P
GM
= 10 W, t
p
= 20 ms
(2) P
GM
= 20 W, t
p
= 10 ms
(3) P
GM
= 40 W, t
p
= 5 ms
(4) P
GM
= 60 W, t
p
= 3.3 ms
