SUD50P04-08
www.vishay.com
Vishay Siliconix
S14-2535-Rev. B, 29-Dec-14
2
Document Number: 65594
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -40 - -
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1 - -2.5
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 250 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -40 V, V
GS
= 0 V - - -1
μAV
DS
= -40 V, V
GS
= 0 V, T
J
= 125 °C - - -50
V
DS
= -40 V, V
GS
= 0 V, T
J
= 150 °C - - -250
On-State Drain Current
a
I
D(on)
V
DS
-10 V, V
GS
= -10 V -50 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -22 A - 0.0067 0.0081
V
GS
= -4.5 V, I
D
= -19 A - 0.0097 0.0117
Forward Transconductance
a
g
fs
V
DS
= -15 V, I
D
= -22 A - 45 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V, V
DS
= -20 V, f = 1 MHz
- 5380 -
pFOutput Capacitance C
oss
- 570 -
Reverse Transfer Capacitance C
rss
- 500 -
Total Gate Charge
c
Q
g
V
DS
= -20 V, V
GS
= -10 V, I
D
= -20 A - 106 159
nC
V
DS
= -20 V, V
GS
= -4.5 V, I
D
= -20 A
-6090
Gate-Source Charge
c
Q
gs
-22-
Gate-Drain Charge
c
Q
gd
-27-
Gate Resistance R
g
f = 1 MHz 0.4 1.8 3.6
Turn-On Delay Time
c
t
d(on)
V
DD
= -20 V, R
L
= 2
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
-1523
ns
Rise Time
c
t
r
-1218
Turn-Off Delay Time
c
t
d(off)
-70105
Fall Time
c
t
f
-1827
Drain-Source Body Diode Ratings and Characteristics (T
C
= 25 °C)
b
Continuous Current I
S
---50
A
Pulsed Current I
SM
---100
Forward Voltage
a
V
SD
I
F
= -10 A, V
GS
= 0 V - -0.8 -1.5 V
Reverse Recovery Time trr
I
F
= -10 A, dI/dt = 100 A/μs
-3553ns
Peak Reverse Recovery Current I
RM(REC)
--2-3A
Reverse Recovery Charge Q
rr
-3350nC
