SUD50P04-08-GE3

SUD50P04-08
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Vishay Siliconix
S14-2535-Rev. B, 29-Dec-14
4
Document Number: 65594
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Capacitance
On-Resistance vs. Junction Temperature
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Current Derating
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0
2000
4000
6000
8000
010203040
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.5
0.8
1.1
1.4
1.7
2.0
I
D
=20A
V
GS
=4.5V
V
GS
=10V
- 2.5
- 2.2
- 1.9
- 1.6
- 1.3
- 1.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
- 51
- 49
- 47
- 45
- 43
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
SUD50P04-08
www.vishay.com
Vishay Siliconix
S14-2535-Rev. B, 29-Dec-14
5
Document Number: 65594
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Single Pulse Avalanche Current Capability vs. Time Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65594
.
Time (s)
(A)I
DAV
1
10
100
10
-3
10
-2
10
-1
10
-4
10
-5
T
J
= 25 °C
T
J
= 150 °C
0.01
0.1
1
10
100
1000
0.1 1 10 100
1s,10s,DC
T
C
=25 °C
Single Pulse
BVDSS
Limited
Limited by R
DS(on)
*
1ms
10 ms, 100 ms
100 µA
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
10
-3
10
-2
001110
-1
10
-4
10
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty Cycle = 0.5
0.05
0.02
Single Pulse
Package Information
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Vishay Siliconix
Revision: 16-May-16
1
Document Number: 71197
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
Notes
Dimension L3 is for reference only.
L3
D
L4
L5
b
b2
e1
E1
D1
C
A1
gage plane height (0.5 mm)
e
b3
E
C2
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347

SUD50P04-08-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V 50A P-CH MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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