FDS8984-F085 N-Channel PowerTrench
®
MOSFET
www.onsemi.com
2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
(Note 3)
Dynamic Characteristics
Switching Characteristics
(Note 3)
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 30 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250µA, referenced to
25°C
23 mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V
V
GS
= 0V
1
µA
T
J
= 125°C 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V,V
DS
= 0V ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
DS
= V
GS
, I
D
= 250µA 1.2 1.7 2.5 V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250µA, referenced to
25°C
- 4.3 mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 7A 19 23
mΩ
V
GS
= 4.5V, I
D
= 6A 24 30
V
GS
= 10V, I
D
= 7A,
T
J
= 125°C
26 32
C
iss
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
475 635 pF
C
oss
Output Capacitance 100 135 pF
C
rss
Reverse Transfer Capacitance 65 100 pF
R
G
Gate Resistance f = 1MHz 0.9 1.6 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15V, I
D
= 7A
V
GS
= 10V, R
GS
= 33Ω
510ns
t
r
Rise Time 918ns
t
d(off)
Turn-Off Delay Time 42 68 ns
t
f
Fall Time 21 34 ns
Q
g
Total Gate Charge
V
DS
= 15V, V
GS
= 10V,
I
D
= 7A
9.2 13 nC
Q
g
Total Gate Charge
V
DS
= 15V, V
GS
= 5V,
I
D
= 7A
5.0 7 nC
Q
gs
Gate to Source Gate Charge 1.5 nC
Q
gd
Gate to Drain “Miller” Charge 2.0 nC
V
SD
Source to Drain Diode Voltage
I
SD
= 7A 0.9 1.25 V
I
SD
= 2.1A 0.8 1.0 V
t
rr
Diode Reverse Recovery Time
I
F
= 7A, di/dt = 100A/µs
33 ns
Q
rr
Diode Reverse Recovery Charge 20 nC
Notes:
1: R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while
R
θCA
is determined by the user’s board design.
Scale 1 : 1 on letter size paper
2: Starting T
J
= 25°C, L = 1mH, I
AS
= 8A, V
DD
= 27V, V
GS
= 10V.
3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%.
c) 135°C/W when
mounted on a
minimun pad
b) 125°C/W when
mounted on a 0.02 in
2
pad of oz copper
a) 78°C/W when
mounted on a 0.5in
2
pad
of 2 oz copper
