FDS8984-F085

FDS8984-F085 N-Channel PowerTrench
®
MOSFET
Figure 7. Gate Charge Characteri
0246810
0
2
4
6
8
10
V
DD
= 20V
V
DD
= 10V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 15V
stics Figure 8. Capacitance vs Drain to Source Voltage
0.1 1 10
100
200
300
400
500
600
700
C
RSS
C
OSS
C
ISS
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 9. Unclamped Inductive Switching
Capability
0.01 0.1 1 10
1
10
20
STARTING T
J
= 125
O
C
STARTING T
J
= 25
O
C
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (mS)
20
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
V
GS
=4.5V
V
GS
=10V
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
Figure 11. Forward Bias Safe Operating Area
0.1 1 10 100
0.01
0.1
1
10
100
DC
1s
100ms
10ms
1ms
100us
10us
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
o
C
Figure 12. Single Pulse Maximum Power
Dissipation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
V
GS
=10V
SINGLE PULSE
t, PULSE WIDTH (s)
P
(PK)
, PEAK TRANSIENT POWER (W)
3000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 T
A
125
------------------------
Typical Characteristics T
J
= 25°C unless otherwise noted
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FDS8984-F085 N-Channel PowerTrench
®
MOSFET
Figure 13. Transient Thermal Response Curve
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1E-4
1E-3
0.01
0.1
1
DUTY CYCLE - DESCENDING ORDER
Normalized Thermal
Impedance Z
θJA
t, RECTANGULAR PULSE DURATION(s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
P
DM
t
1
t
2
Typical Characteristics T
J
= 25°C unless otherwise noted
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5
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emiconductor Components Industries, LLC

FDS8984-F085

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET NCH PWR TRNCH MOSFET
Lifecycle:
New from this manufacturer.
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