NTMFS4835NT1G Datasheet NTMFS4835NT1G, NTMFS4835NT3G | P1-P3

January, 2018 − Rev. 9

1 Publication Order Number:

NTMFS4835N/D

NTMFS4835N

Power MOSFET

30 V, 104 A, Single N−Channel, SO−8FL

Features

• Low R

DS(on)

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

MAXIMUM RATINGS (T

J

= 25°C unless otherwise stated)

Parameter

Symbol Value Unit

Drain−to−Source Voltage V

DSS

30 V

Gate−to−Source Voltage V

GS

±20 V

Continuous Drain

Current R

q

JA

(Note 1)

Steady

State

T

A

= 25°C

I

D

20

A

T

A

= 85°C 14

Power Dissipation

R

q

JA

(Note 1)

T

A

= 25°C P

D

2.27 W

Continuous Drain

Current R

q

JA

(Note 2)

T

A

= 25°C

I

D

12

A

T

A

= 85°C 9.0

Power Dissipation

R

q

JA

(Note 2)

T

A

= 25°C P

D

0.89 W

Continuous Drain

Current R

q

JC

(Note 1)

T

C

= 25°C

I

D

104

A

T

C

= 85°C 75

Power Dissipation

R

q

JC

(Note 1)

T

C

= 25°C P

D

62.5 W

Pulsed Drain

Current

T

A

= 25°C,

t

p

= 10 ms

I

DM

208 A

Operating Junction and Storage

Temperature

T

J

,

T

STG

−55 to

+150

°C

Source Current (Body Diode) I

S

52 A

Drain to Source DV/DT d

V

/d

t

6 V/ns

Single Pulse Drain−to−Source Avalanche

Energy T

J

= 25°C, V

DD

= 50 V, V

GS

= 10 V,

I

L

= 28 A

pk

, L = 1.0 mH, R

G

= 25 W

E

AS

392 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T

L

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

www.onsemi.com

A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

4835N

AYWZZ

1

V

(BR)DSS

R

DS(ON)

MAX I

D

MAX

30 V

3.5 mW @ 10 V

104 A

5.0 mW @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

Device Package Shipping

†

ORDERING INFORMATION

NTMFS4835NT1G SO−8FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4835NT3G SO−8FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

s

Brochure, BRD8011/D.

S

G

D

NTMFS4835N

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2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

R

q

JC

2.0

°C/W

Junction−to−Ambient – Steady State (Note 3)

R

q

JA

55.1

Junction−to−Ambient – Steady State (Note )

R

q

JA

140.1

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= 250 mA

30 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS

/

T

J

22.4

mV/°C

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V,

V

DS

= 24 V

T

J

= 25 °C 1.0

mA

T

J

= 125°C 10

Gate−to−Source Leakage Current I

GSS

V

DS

= 0 V, V

GS

= ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS(TH)

V

GS

= V

DS

, I

D

= 250 mA

1.5 1.9 2.5 V

Negative Threshold Temperature Coefficient V

GS(TH)

/T

J

5.3 mV/°C

Drain−to−Source On Resistance R

DS(on)

V

GS

= 10 V to

11.5 V

I

D

= 30 A 2.9 3.5

mW

I

D

= 15 A 2.5

V

GS

= 4.5 V

I

D

= 30 A 4.3 5.0

I

D

= 15 A 3.9

Forward Transconductance g

FS

V

DS

= 15 V, I

D

= 15 A 21 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

C

ISS

V

GS

= 0 V, f = 1 MHz, V

DS

= 12 V

1860 3100 4340

pF

Output Capacitance C

OSS

402 670 938

Reverse Transfer Capacitance C

RSS

216 360 504

Total Gate Charge Q

G(TOT)

V

GS

= 4.5 V, V

DS

= 15 V; I

D

= 30 A

22 39

nC

Threshold Gate Charge Q

G(TH)

4.7

Gate−to−Source Charge Q

GS

8.3

Gate−to−Drain Charge Q

GD

8.8

Total Gate Charge Q

G(TOT)

V

GS

= 11.5 V, V

DS

= 15 V;

I

D

= 30 A

52

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

t

d(ON)

V

GS

= 4.5 V, V

DS

= 15 V, I

D

= 15 A,

R

G

= 3.0 W

16

ns

Rise Time t

r

31

Turn−Off Delay Time t

d(OFF)

22

Fall Time t

f

13

Turn−On Delay Time t

d(ON)

V

GS

= 11.5 V, V

DS

= 15 V,

I

D

= 15 A, R

G

= 3.0 W

10

ns

Rise Time t

r

23

Turn−Off Delay Time t

d(OFF)

30

Fall Time t

f

10

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

NTMFS4835N

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3

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

= 0 V,

I

S

= 30 A

T

J

= 25°C 0.77 1.0

V

T

J

= 125°C 0.70

Reverse Recovery Time t

RR

V

GS

= 0 V, dIS/dt = 100 A/ms,

I

S

= 30 A

27 50

ns

Charge Time t

a

15

Discharge Time t

b

12

Reverse Recovery Charge Q

RR

18 nC

PACKAGE PARASITIC VALUES

Source Inductance

L

S

T

A

= 25°C

0.65 nH

Drain Inductance L

D

0.005 nH

Gate Inductance L

G

1.84 nH

Gate Resistance R

G

1.3 5.0

W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

NTMFS4835NT1G

NTMFS4835NT1G

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