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NTMFS4835NT1G

P1-P3P4-P6P7-P7
NTMFS4835N
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
2.8 V
2.6 V
6
0
0.003
0
35
2.0
1.0
0
1,000
100,000
021
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
0.015
0
4
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
−50 250−25 50 75
23
1612 3
0
4
3
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°CT
J
= 125°C
V
GS
= 4.5 V
125
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 150°C
30
0
4
6
T
J
= 25°C
20
V
GS
= 5.0 to 10 V
100
40
615
0.001
20
3.0 V
3.2 V
3.5 V
30
10
170
10
170
I
D
= 30 A
T
J
= 25°C
8
V
GS
= 11.5 V
100
T
J
= 25°C
0.002
10
5
50
1
10 12
0.004
24
50
70
90
110
130
70
130
0.005
0.010
0.020
40 5045
1.5
0.5
T
J
= 125°C
150
0.030
90
110
10,000
8
768910
150
4.0 V
5
150
0.025
0.007
0.005
0.006
0.008
25 30 55
10
28
NTMFS4835N
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
t
r
t
d(off)
t
d(on)
t
f
V
GS
15 0 10 15
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
3500
0
V
GS
V
DS
55
T
J
= 25°C
C
iss
C
oss
C
rss
C
iss
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
0
4
0
Q
G
, TOTAL GATE CHARGE (nC)
2
8
30
I
D
= 30 A
T
J
= 25°C
Q
T
35
0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
1 10 100
1000
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.5 0.6
5
10
15
1
V
DS
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
0.7 0.8
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
1
100
0
25
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
= 28 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75
120
100 125
200
400
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
15
0
500
40
30
5000
3000
2500
1500
1000
0.4 1.1
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
)
6
2010 25 504540
Q
gs
320
360
12
55
4500
10
Q
gd
0.1
80
160
240
280
10 25
2000
4000
155
20
18
16
14
12
10
8
6
4
2
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
10
0.9 1.0
NTMFS4835N
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
125°C
100°C
25°C
Figure 13. Avalanche Characteristics
100001 100
PULSE WIDTH (ms)
I
D
, DRAIN CURRENT (AMPS)
10
10
1
1000
100
1000
Figure 14. FET Thermal Response
0.001
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 100
0
t, PULSE TIME (s)
R
q
J(t)
(
°
C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.02
0.2
0.01
0.05
Duty Cycle = 0.5
SINGLE PULSE
0.1
1 10 100
100
0.01
Figure 15. FET Thermal Response from Junction to Case
0.001
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 100
0
t, PULSE TIME (s)
R
q
J(t)
(
°
C/W)
1 10 100
0.01
qJC
P1-P3P4-P6P7-P7

NTMFS4835NT1G

Mfr. #:
Buy NTMFS4835NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 104A 3.5mOhm
Lifecycle:
New from this manufacturer.
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