DS1848
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Memory Location Name of Location Function of Location
00h to 47h
(the Table Select
Byte, E0h, must be
set to 01h or 02h to
access the Look-
Up Tables)
00h to 7Fh
(the Table Select
Byte, E0h, must be
set to 00h to access
the User EEPROM
Memory)
User Defined Look-Up Table
(LUT)
User Memory
This block contains the user-defined temperature
settings of the resistors. Values between 00h and
FFh can be written to either table to set the 256
position variable resistors. The first address
location, 00h, is used to set the resistor at -40°C.
Each successive memory location will contain the
resistor setting for the previous temperature +2°C.
For example, memory address 01h is the address
that will set the resistor in a -38°C environment.
For default memory settings and programming
the look-up table, refer to the Programming the
Look-Up Table (LUT) section of the datasheet.
This block is for general-purpose user memory.
When shipped from the factory, memory
locations 60h – 6Bh contain the same information
as found in Look-Up Table 1, memory locations
28h – 33h. Memory locations 6Ch – 77h contain
the same information as found in Look-Up Table
2, memory locations 28h – 33h.
E0h Table Select Byte Writing to this byte determines if one of the two
72x8 EEPROM look-up tables or the user
EEPROM memory is selected for reading or
writing.
00h (User EEPROM selected)
01h (Look-Up Table 1 selected)
02h (Look-Up Table 2 selected)
E1h Configuration Byte
TAU – Temperature/Address Update
TEN – Temperature Update Enable
AEN – Address Update Enable
Default setting is 03h, TAU = 1, TEN = 1 and
AEN = 1.
TAU becomes a 1 after a temperature and address
update has occurred as a result of a temperature
conversion. The user can write this bit to 0 and
check for a transition from 0 to 1 in order to
verify that a conversion has occurred.
If TEN = 0, the temperature conversion feature is
disabled. The user sets the resistor in “manual
mode” by writing to addresses F0h and F1h to
control resistors 0 and 1, respectively.
TAU TEN AEN
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Memory Location Name of Location Function of Location
With AEN = 0 the user can operate in a test
mode. Address updates made from the
temperature sensor will cease. The user can load a
memory location into E4h and verify that the
values in locations F0h and F1h are the expected
user-defined values.
E2h Temperature MSB This byte contains the MSB of the 13-bit 2s
complement temperature output from the
temperature sensor.
E3h Temperature LSB This byte contains the LSB of the 13-bit 2s
complement temperature output from the
temperature sensor.
For example temperature readings, refer to Table
2.
E4h Address Pointer Calculated, current resistor address (0h – 47h).
The user-defined resistor setting at this location in
the respective look-up table will be loaded into
F0h and F1h to set the two resistors.
E5h to E6h User Memory General purpose user memory (SRAM)
E7h Address Select Internal or external device address select. This
byte allows the user to use the external address
pins or an internal register location to determine
the device address.
ENB = 0 and external A2, A1, A0 grounded,
device will use internal address bits (A2, A1, A0)
in this register
ENB = 1, external A2, A1, A0 = any setting,
device will use external address pins
Default setting is 01h. The device uses external
pins to determine its address.
E8h to EFh User Memory General purpose user memory (SRAM)
F0h Resistor 0 Setting In the user-controlled setting mode, this block
contains the resistor 0 setting.
F1h Resistor 1 Setting In the user-controlled setting mode, this block
contains the resistor 1 setting.
F2h to FFh User memory General purpose user memory (SRAM)
S 2
7
2
6
2
5
2
4
2
3
2
2
2
1
2
0
2
-1
2
-2
2
-3
2
-4
X X X
A2 A1 A0 ENB
DS1848
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PROGRAMMING THE LOOK-UP TABLE (LUT)
The following equation can be used to determine which resistor position setting, 00h – FFh, should be
written in the LUT to achieve a given resistance at a specific temperature.
()()
[
]
() ( ) ( )
[]
aa -
-·+-·+·
-·+-·+·-
=
2
2
25251
25251
),,(
CzCyx
CwCvuR
CRpos
DS1848-050
a = 3.78964 for the 50kW resistor
a = 19.74866 for the 10kW resistor
DS1848-010
a = 8.394533 for both 10kW resistors
R = resistance desired at the output terminal
C = temperature in degrees Celsius
u, v, w, x, y, and z are calibration constants programmed into each of the corresponding look-up tables.
Their addresses and LSB values are given in Table 1 below. Resistor 1 variables are found in Look-Up
table 1 of the EEPROM, and Resistor 2 variables are found in Look-Up Table 2. After these values are
read, they should be overwritten with the appropriate temperature specific resistance settings. Copies of
these values can also be found in the User EEPROM memory.
LOOK-UP VARIABLE ADDRESSES Table1
Address in
LUT (HEX)
Variable LSB
28 – 29 u 2
-8
2A – 2B v 10
-6
2C – 2D w 10
-9
2E – 2F x 2
-8
30 – 31 y 10
-7
32 – 33 z 10
-10
When shipped from the factory, all other memory locations in the LUTs are programmed to FFh (except
bytes 00h-07h of Table 1 and 2 which may be factory programmed to values other than FFh).
Note: Memory locations 44h – 47h, which cover the temperature range (+96ºC to +102ºC), are outside
of the specified operating temperature range (-40ºC to +95ºC). However, the values stored in these
locations will act as valid resistance settings if the temperature exceeds +95ºC. Therefore, Dallas
Semiconductor recommends that the user program a resistance value into all LUT locations. Failure to do
so will result in the part being set to the default value.

DS1848E-010+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Digital Potentiometer ICs Dual Temp Controlled NV Variable Resistor
Lifecycle:
New from this manufacturer.
Delivery:
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