2SK3482-AZ Datasheet 2SK3482-AZ | P4-P6

Data Sheet D15064EJ3V0DS

2

2SK3482

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10

μ

A

Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10

μ

A

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance

Note

| y

fs | VDS = 10 V, ID = 18 A 12 23 S

Drain to Source On-state Resistance

Note

R

DS(on)1 VGS = 10 V, ID = 18 A 27 33 mΩ

RDS(on)2 VGS = 4.5 V, ID = 18 A 29 39 mΩ

Input Capacitance Ciss VDS = 10 V 3600 pF

Output Capacitance Coss VGS = 0 V 360 pF

Reverse Transfer Capacitance Crss f = 1 MHz 190 pF

Turn-on Delay Time td(on) VDD = 50 V, ID = 18 A 15 ns

Rise Time tr VGS = 10 V 10 ns

Turn-off Delay Time td(off) RG = 0 Ω 68 ns

Fall Time tf 6 ns

Total Gate Charge QG VDD = 80 V 72 nC

Gate to Source Charge QGS VGS = 10 V 10 nC

Gate to Drain Charge QGD ID = 36 A 19 nC

Body Diode Forward Voltage

Note

V

F(S-D) IF = 36 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 36 A, VGS = 0 V 70 ns

Reverse Recovery Charge Qrr di/dt = 100 A/

μ

s 180 nC

Note Pulsed

TEST CIRCUIT 3 GATE CHARGE

V

GS

= 20 → 0 V

PG.

R

G

= 25 Ω

50 Ω

D.U.T.

L

V

DD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

R

G

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

I

D

V

DD

I

AS

V

DS

BV

DSS

Starting T

ch

V

GS

0

τ = 1 s

Duty Cycle ≤ 1%

τ

V

GS

Wave Form

V

DS

Wave Form

V

GS

V

DS

10%

0

90%

V

GS

V

DS

t

on

t

off

t

d(on)

t

r

t

d(off)

t

f

10% 10%

μ

<R>

Data Sheet D15064EJ3V0DS

3

2SK3482

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

dT - Percentage of Rated Power - %

0

20

40

60

80

100

120

0 25 50 75 100 125 150 175

PT - Total Power Dissi

p

ation - W

0

10

20

30

40

50

60

0 25 50 75 100 125 150 175

T

C - Case Temperature - °C TC - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

ID - Drain Current - A

10

1

0.1

100

0.1

1000

1 10 100

T

C

= 25˚C

Single Pulse

1000

R

DS(on)

Limited

(at V

GS

= 10 V)

I

D(pulse)

= 100 A

I

D(DC)

= 36 A

Power Dissipation

Limited

DC

PW = 10

μs

100 μs

1 ms

10 ms

V

DS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t) - Transient Thermal Resistance - °C/W

10

0.01

0.1

1

100

1000

1 m 10 m 100 m 1 10 100 1000

Single Pulse

10

μ

100

μ

Channel to Ambient

Channel to Case

R

th(ch-A)

= 125˚C/W

R

th(ch-C)

= 2.5˚C/W

PW - Pulse Width - s

Data Sheet D15064EJ3V0DS

4

2SK3482

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

ID - Drain Current - A

0

10

20

30

40

50

60

70

80

90

012345

Pulsed

VGS = 10 V

4.5 V

ID - Drain Current - A

0.01

0.1

1

10

100

012345

V

DS

= 10 V

Pulsed

TA = 150°

C

75°

C

-25°

C

-40°

C

V

DS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

VGS(off) – Gate Cut-off Voltage - V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-50 -25 0 25 50 75 100 125 150

V

SD

= 10 V

ID = 1mA

|

y

fs

|

- Forward Transfer Admittance - S

0.01

0.1

1

10

100

0.01 0.1 1 10 100

V

DS

= 10V

Pulsed

T

A

= 150°C

-40°C

25°C

75°C

T

ch - Channel Temperature - °C ID - Drain Current - A

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

0

10

20

30

40

50

60

70

0.1 1 10 100

10 V

Pulsed

V GS = 4.5V

0

5

10

15

20

25

30

35

40

45

50

0 2 4 6 8 101214161820

Pulsed

ID = 36 A

18 A

7.2 A

RDS(on) - Drain to Source On-state Resistance - mΩ

ID - Drain Current - A

RDS(on) - Drain to Source On-state Resistance - mΩ

VGS - Gate to Source Voltage - V

2SK3482-AZ

2SK3482-AZ

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