Data Sheet D15064EJ3V0DS
5
2SK3482
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
Pulsed
VGS = 4.5 V
10 V
10
100
1000
10000
0.01 0.1 1 10 100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
RDS(on) - Drain to Source On-state Resistance - mΩ
Tch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
1000
0.1 1 10 100
V
DD
= 50 V
V
GS
= 10 V
R
G = 0 Ω
td(off)
td(on)
tr
tf
VDS - Drain to Source Voltage - V
0
10
20
30
40
50
60
70
80
90
100
0 1020304050607080
0
2
4
6
8
10
I
D
= 36 A
V
DS
V
GS
V
DD
= 80 V
50 V
20 V
VGS - Gate to Drain Volta
e - V
ID - Drain Current - A QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
ISD
Diode Forward Current
A
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5
Pulsed
0 V
V
GS
= 10 V
trr - Reverse Recovery Time - ns
1
10
100
1000
0.1 1 10 100
di/dt = 100 A/
μ
s
V
GS
= 0 V
V
SD - Source to Drain Voltage - V IF - Drain Current - A
