SI8662BC-A-IS1 Datasheet SI8662BC-A-IS1, SI8660BA-A-IS1 | P13-P15

Rev. 1.3 13

Si8660/61/62/63

100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)

Si8660Bx, Ex

DD1

DD2

—

5.0

14.7

7.0

19.1

Si8661Bx, Ex

DD1

DD2

—

6.7

13.4

9.1

17.4

Si8662Bx, Ex

DD1

DD2

—

8.7

11.7

11.3

15.2

Si8663Bx, Ex

DD1

DD2

—

10.3

13.4

Timing Characteristics

Si866xBx, Ex

Maximum Data Rate 0 — 150 Mbps

Minimum Pulse Width — — 5.0 ns

Propagation Delay t

PHL

, t

PLH

See Figure 1 5.0 8.0 14 ns

Pulse Width Distortion

PLH

PHL

PWD See Figure 1 — 0.2 5.0 ns

Propagation Delay Skew

PSK(P-P)

—2.05.0ns

Channel-Channel Skew t

PSK

—0.42.5ns

All Models

Output Rise Time t

=15pF

See Figure 1

—

2.5 4.0

Output Fall Time t

=15pF

See Figure 1

—

2.5 4.0

Peak Eye Diagram Jitter t

JIT(PK)

See Figure 6 — 350 — ps

Common Mode

Transient Immunity

CMTI V

or 0 V 35 50 — kV/µs

Startup Time

—1540µs

Table 4. Electrical Characteristics (Continued)

DD1

=2.5V ±5%, V

DD2

= 2.5 V ±5%, T

= –40 to 125 ºC)

Parameter Symbol Test Condition Min Typ Max Unit

Notes:

1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the

value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads

where transmission line effects will be a factor, output pins should be appropriately terminated with controlled

impedance PCB traces.

2. t

PSK(P-P)

is the magnitude of the difference in propagation delay times measured between different units operating at the

same supply voltages, load, and ambient temperature.

3. Start-up time is the time period from the application of power to valid data at the output.

14 Rev. 1.3

Si8660/61/62/63

Table 5. Regulatory Information*

CSA

The Si866x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.

61010-1: Up to 600 V

RMS

reinforced insulation working voltage; up to 600 V

RMS

basic insulation working voltage.

60950-1: Up to 600 V

RMS

reinforced insulation working voltage; up to 1000 V

RMS

basic insulation working volt-

age.

60601-1: Up to 125 V

RMS

reinforced insulation working voltage; up to 380 V

RMS

basic insulation working voltage.

VDE

The Si866x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.

60747-5-2: Up to 1200 V

peak

for basic insulation working voltage.

60950-1: Up to 600 V

RMS

reinforced insulation working voltage; up to 1000 V

RMS

basic insulation working volt-

age.

The Si866x is certified under UL1577 component recognition program. For more details, see File E257455.

Rated up to 5000 V

RMS

isolation voltage for basic protection.

*Note: Regulatory Certifications apply to 3.75 kV

RMS

rated devices which are production tested to 4.5 kV

RMS

for 1 sec.

Regulatory Certifications apply to 5.0 kV

RMS

rated devices which are production tested to 6.0 kV

RMS

for 1 sec.

For more information, see "5. Ordering Guide" on page 26.

Table 6. Insulation and Safety-Related Specifications

Parameter Symbol

Test

Condition

Value

Unit

SOIC-16

Nominal Air Gap (Clearance)

L(IO1) 8.0 4.9 mm

Nominal External Tracking

(Creepage)

L(IO2) 8.0 4.01 mm

Minimum Internal Gap

(Internal Clearance)

0.014 0.011

Tracking Resistance

(Proof Tracking Index)

PTI IEC60112 600 600 V

RMS

Erosion Depth ED 0.019 0.019 mm

Resistance (Input-Output)



Capacitance (Input-Output)

f = 1 MHz 2.0 2.0 pF

Input Capacitance

4.0 4.0 pF

Notes:

1. The values in this table correspond to the nominal creepage and clearance values. VDE certifies the clearance and

creepage limits as 4.7 mm minimum for the NB SOIC-16 package and 8.5 mm minimum for the WB SOIC-16 package.

UL does not impose a clearance and creepage minimum for component-level certifications. CSA certifies the clearance

and creepage limits as 3.9 mm minimum for the NB SOIC-16 package and 7.6 mm minimum for the WB SOIC-16

package.

2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 are shorted

together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are

then measured between these two terminals.

3. Measured from input pin to ground.

Rev. 1.3 15

Si8660/61/62/63

Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings

Parameter

Test Conditions

Specification

NB SOIC-16 WB SOIC-16

Basic Isolation Group Material Group I I

Installation Classification

Rated Mains Voltages <

150 V

RMS

I-IV I-IV

Rated Mains Voltages <

300 V

RMS

I-III I-IV

Rated Mains Voltages <

400 V

RMS

I-II I-III

Rated Mains Voltages <

600 V

RMS

I-II I-III

Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*

Parameter

Symbol Test Condition

Characteristic

Unit

SOIC-16

NB SOIC-16

Maximum Working Insulation

Voltage

IORM

1200 630 Vpeak

Input to Output Test Voltage

Method b1

IORM

x1.875=V

, 100%

Production Test, t

= 1 sec,

Partial Discharge < 5 pC)

2250 1182

Transient Overvoltage

IOTM

t = 60 sec 6000 6000 Vpeak

Pollution Degree

(DIN VDE 0110, Table 1)

Insulation Resistance at T

=500V

>10



*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of

40/125/21.

Table 9. IEC Safety Limiting Values

Parameter Symbol Test Condition Min Typ

Max

Unit

WB SOIC-16 NB SOIC-16

Case Temperature T

—— 150 150 °C

Safety Input, Output,

or Supply Current



=105°C/W

(NB SOIC-16),

=5.5V, T

=150°C,

=25°C

——

220 215

Device Power

Dissipation

——

415 415

Notes:

1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 2 and 3.

2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square

wave.

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