VNQ830-E
10/21
Figure 8. Application Schematic
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
600mV / 2(I
S(on)max
).
2) R
GND
≥ (−V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
S(on)max
becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
GND
will
produce a shift (I
S(on)max
* R
GND
) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2.
V
CC1,2
OUTPUT2
+5V
R
prot
OUTPUT1
STATUS1
INPUT1
+5V
STATUS2
INPUT2
+5V
D
GND
R
GND
V
GND
GND1,2
GND3,4
OUTPUT3
OUTPUT4
µ
C
V
CC3,4
STATUS3
INPUT3
STATUS4
INPUT4
+5V+5V
R
prot
R
prot
R
prot
R
prot
R
prot
R
prot
R
prot
D
ld
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
Obsolete Product(s) - Obsolete Product(s)
11/21
VNQ830-E
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
GND
=1kΩ) should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
D
ld
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
CC
max DC rating.
The same applies if the device will be subject to
transients on the V
CC
line that are greater than the ones
shown in the ISO T/R 7637/1 table.
.
µC I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the V
CC
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
-V
CCpeak
/I
latchup
R
prot
(V
OHµC
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
20mA; V
OHµC
4.5V
5k R
prot
65k.
Recommended R
prot
value is 10kΩ.
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up
resistor (R
PU
) connected between OUTPUT pin and a
positive supply voltage (V
PU
) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid V
OUT
to be higher than
V
Olmin
; this results in the following condition
V
OUT
=(V
PU
/(R
L
+R
PU
))R
L
<V
Olmin.
2) no misdetection when load is disconnected: in this
case the V
OUT
has to be higher than V
OLmax
; this
results in the following condition R
PU
<(V
PU–
V
OLmax
)/
I
L(off2)
.
Because I
s(OFF)
may significantly increase if V
out
is
pulled high (up to several mA), the pull-up resistor R
PU
should be connected to a supply that is switched OFF
when the module is in standby.
The values of V
OLmin
, V
OLmax
and I
L(off2)
are available in
the Electrical Characteristics section.
Figure 9. Open Load detection in off state
VOL
V batt. VPU
R
P
U
RL
R
DRIVER
+
LOGIC
+
-
INPUT
S
TATUS
V
CC
OUT
GROUND
I
L(off2)
Obsolete Product(s) - Obsolete Product(s)
VNQ830-E
12/21
Figure 10. Off State Output Current
Figure 11. Input Clamp Voltage
Figure 12. Status Low Output Voltage
Figure 13. High Level Input Current
Figure 14. Status Leakage Current
Figure 15. Status Clamp Voltage
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
IL(off1) (uA)
Off state
Vcc=36V
Vin=Vout=0V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
6
6.2
6.4
6.6
6.8
7
7.2
7.4
7.6
7.8
8
Vicl (V)
Iin=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Vstat (V)
Istat=1.6mA
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Iih (uA)
Vin=3.25V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
0.01
0.02
0.03
0.04
0.05
Ilstat (uA)
Vstat=5V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
6
6.2
6.4
6.6
6.8
7
7.2
7.4
7.6
7.8
8
Vscl (V)
Istat=1mA
Obsolete Product(s) - Obsolete Product(s)

VNQ830TR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Quad Channel Hi-Side
Lifecycle:
New from this manufacturer.
Delivery:
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