8
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued)
t
WC
Write Cycle Time 15
20
25
35
ns
t
CW
Chip Select to End-of-Write 13
15
17
25
ns
t
AW
Address Valid to End-of-Write 14
15
17
25
ns
t
AS
Address Set-up Time 0
0
0
0
ns
t
WP
Write Pulse Width 12
12
15
20
ns
t
WR
Write Recovery Time 0
0
0
0
ns
t
WHZ
(3 )
Write to Output in High-Z
7
8
16
20 ns
t
DW
Data to Write Time Overlap 12
12
13
15
ns
t
DH
(4 )
Data Hold from Write Time 0
0
0
0
ns
t
OW
(3,4)
Output Active from End-of-Write 0
0
0
0
ns
3089 tbl 14
t
WC
Write Cycle Time 45
55
70
90
120
150
ns
t
CW
Chip Select to End-of-Write 30
40
40
55
70
90
ns
t
AW
Address Valid to End-of-Write 30
45
65
80
105
120
ns
t
AS
Address Set-up Time 0
5
15
15
20
20
ns
t
WP
Write Pulse Width 25
40
40
55
70
90
ns
t
WR
Write Recovery Time 0
5
5
5
5
10
ns
t
WHZ
(3 )
Write to Output in High-Z
25
30
35
40
40
40 ns
t
DW
Data to Write Time Overlap 20
25
30
30
35
40
ns
t
DH
(4 )
Data Hold from Write Time 0
5
5
5
5
10
ns
t
OW
(3,4)
Output Active from End-of-Write 0
0
0
0
0
0
ns
3089 tbl 15
