APT100GT60B2RG Datasheet APT100GT60B2RG | P1-P3

Symbol

Parameter

Ratings Unit

V

CES

Collector-Emitter Voltage 600

Volts

V

GE

Gate-Emitter Voltage ±30

I

C1

Continuous Collector Current @ T

C

= 25°C

148

Amps

I

C2

Continuous Collector Current @ T

C

= 100°C

80

I

CM

Pulsed Collector Current

1

300

SSOA

Switching Safe Operating Area @ T

J

= 150°C

300A @ 600V

P

D

Total Power Dissipation 500 Watts

T

J

, T

STG

Operating and Storage Junction Temperature Range -55 to 150 °C

Maximum Ratings All Ratings: T

C

= 25°C unless otherwise speciﬁ ed.

Symbol

Characteristic / Test Conditions

Min Typ Max

Unit

V

(BR)CES

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 4mA)

600 - -

Volts

V

GE(TH)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 1.5mA, T

j

= 25°C)

345

V

CE(ON)

Collector Emitter On Voltage (V

GE

= 15V, I

C

= 100A, T

j

= 25°C)

1.7 2.1 2.5

Collector Emitter On Voltage (V

GE

= 15V, I

C

= 100A, T

j

= 125°C)

- 2.5 -

I

CES

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 25°C)

2

--25

A

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 125°C)

2

- - 1000

I

GES

Gate-Emitter Leakage Current (V

GE

= ±30V)

- - 300 nA

Static Electrical Characteristics

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

052-6297 Rev C 3 - 2012

APT100GT60B2R(G)

APT100GT60LR(G)

600V, 100A, V

CE(ON)

= 2.1V Typical

Thunderbolt

IGBT

®

The Thunderbolt IGBT

®

is a new generation of high voltage power IGBTs. Using

Non-Punch-Through Technology, the Thunderbolt IGBT

®

offers superior rugged-

ness and ultrafast switching speed.

Features

• Low Forward Voltage Drop

• Low Tail Current

• Integrated Gate Resistor

Low EMI, High Reliability

• RoHS Compliant

• RBSOA and SCSOA Rated

• High Frequency Switching to 50KHz

• Ultra Low Leakage Current

G

C

E

G

C

E

052-6297 Rev C 3 - 2012

Dynamic Characteristic APT100GT60B2R_LR(G)

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1MHz

- 5150 -

pF

C

oes

Output Capacitance - 475 -

C

res

Reverse Transfer Capacitance - 295 -

V

GEP

Gate-to-Emitter Plateau Voltage

Gate Charge

V

GE

= 15V

V

CE

= 300V

I

C

= 100A

- 8.0 - V

Q

g

Total Gate Charge

3

- 460 -

nC

Q

ge

Gate-Emitter Charge - 40 -

Q

gc

Gate-Collector Charge - 210 -

SSOA

Switching Safe Operating Area

T

J

= 150°C, R

G

= 4.3 , V

GE

= 15V,

L = 100H, V

CE

= 600V

300 A

t

d(on)

Turn-On Delay Time

Inductive Switching (25°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 100A

R

G

= 4.3

T

J

= +25°C

-40 -

ns

t

r

Current Rise Time - 75 -

t

d(off)

Turn-Off Delay Time - 320 -

t

f

Current Fall Time - 100 -

E

on1

Turn-On Switching Energy

4

- 3250 -

J

E

on2

Turn-On Switching Energy

5

- 3525 -

E

off

Turn-Off Switching Energy

6

- 3125 -

t

d(on)

Turn-On Delay Time

Inductive Switching (125°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 100A

R

G

= 4.3

T

J

= +125°C

-40 -

ns

t

r

Current Rise Time - 75 -

t

d(off)

Turn-Off Delay Time - 350 -

t

f

Current Fall Time - 100 -

E

on1

Turn-On Switching Energy

4

- 3275 -

J

E

on2

Turn-On Switching Energy

5

- 4650 -

E

off

Turn-Off Switching Energy

6

- 3750 -

Symbol

Characteristic / Test Conditions Min Typ Max Unit

R

JC

Junction to Case (IGBT)

- - 0.25

°C/W

R

JC

Junction to Case (DIODE)

- - N/A

W

T

Package Weight

- 29.2 - g

Torque Terminals and Mounting Screws

- - 10

in·lbf

- - 1.1

N·m

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

For Combi devices, I

ces

includes both IGBT and FRED leakages.

3

See MIL-STD-750 Method 3471.

4

E

on1

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to

z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁ gure 21, but with a Silicon Carbide diode.

5

E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6

E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

7 R

G

is external gate resistance not including gate driver impedance.

Thermal and Mechanical Characteristics

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

052-6297 Rev C 3 - 2012

Typical Performance Curves APT100GT60B2R_LR(G)

V

GS(TH)

, THRESHOLD VOLTAGE V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

(NORMALIZED)

I

C,

DC COLLECTOR CURRENT(A) V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) V

GE

, GATE-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A)

V

CE

= 480V

V

CE

= 300V

V

CE

= 120V

I

C

= 100A

T

J

= 25°C

250μs PULSE

TEST<0.5 % DUTY

CYCLE

200

180

160

140

120

100

80

60

40

20

0

200

180

160

140

120

100

80

60

40

20

0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

300

250

200

150

100

50

0

16

14

12

10

8

6

4

2

0

4

3.5

3

2.5

2

1.5

1

0.5

0

200

180

160

140

120

100

80

60

40

20

0

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V) V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(V

GE

= 15V) FIGURE 2, Output Characteristics (T

J

= 125°C)

V

GE

, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V) T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

T

C

= 125°C

12, 13, &15V

10V

9V

8V

7V

T

J

= -55°C

T

J

= 25°C.

250μs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 200A

I

C

= 100A

I

C

= 50A

V

GE

= 15V. 250 μs

PULSE TEST <0.5 %

DUTY CYCLE

I

C

= 200A

I

C

= 100A

I

C

= 50A

0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30

0 2 4 6 8 10 0 100 200 300 400 500

6 8 10 12 14 16 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

C

= 25°C

T

C

= -55°C

V

GE

= 15V

6V

T

C

= 25°C

T

C

= 125°C

APT100GT60B2RG

APT100GT60B2RG

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