APT100GT60B2RG Datasheet APT100GT60B2RG | P4-P6

052-6297 Rev C 3 - 2012

Typical Performance Curves APT100GT60B2R_LR(G)

V

GE

=15V,T

J

=125°C

V

GE

=15V,T

J

=25°C

V

CE

= 400V

R

G

= 4.3Ω

L = 100μH

SWITCHING ENERGY LOSSES (μJ) E

ON2

, TURN ON ENERGY LOSS (μJ) t

r,

RISE TIME (ns) t

d(ON)

, TURN-ON DELAY TIME (ns)

SWITCHING ENERGY LOSSES (μJ) E

OFF

, TURN OFF ENERGY LOSS (μJ) t

f,

FALL TIME (ns) t

d

(OFF)

, TURN-OFF DELAY TIME (ns)

I

CE

, COLLECTOR TO EMITTER CURRENT (A) I

CE

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-O Delay Time vs Collector Current

I

CE

, COLLECTOR TO EMITTER CURRENT (A) I

CE

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current

I

CE

, COLLECTOR TO EMITTER CURRENT (A) I

CE

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn O Energy Loss vs Collector Current

R

G

, GATE RESISTANCE (OHMS) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature

V

CE

= 400V

V

GE

= +15V

R

G

= 4.3Ω

R

G

= 4.3Ω, L = 100μH, V

CE

= 400V

V

CE

= 400V

T

J

= 25°C, or 125°C

R

G

= 4.3Ω

L = 100μH

35

30

25

20

15

10

5

0

250

200

150

100

50

0

16000

14000

12000

10000

8000

6000

4000

2000

0

35000

30000

25000

20000

15000

10000

5000

0

V

GE

= 15V

T

J

= 125°C, V

GE

= 15V

T

J

= 25 or 125°C,V

GE

= 15V

T

J

= 25°C, V

GE

= 15V

T

J

= 125°C

T

J

= 25°C

V

CE

= 400V

V

GE

= +15V

R

G

= 4.3Ω

T

J

= 125°C

T

J

= 25°C

0 25 50 75 100 125 150 175 200 225 0 25 50 75 100 125 150 175 200 225

0 25 50 75 100 125 150 175 200 225 0 25 50 70 100 125 150 175 200 225

0 10 20 30 40 50 0 25 50 75 100 125

R

G

= 4.3Ω, L = 100μH, V

CE

= 400V

450

400

350

300

250

200

150

100

50

0

200

180

160

140

120

100

80

60

40

20

0

12000

10000

8000

6000

4000

2000

0

16000

14000

12000

10000

8000

6000

4000

2000

0

V

CE

= 400V

V

GE

= +15V

R

G

= 4.3Ω

E

o ,

200A

E

on2,

200A

E

o ,

100A

E

on2,

100A

E

o ,

50A

E

on2,

50A

V

CE

= 400V

V

GE

= +15V

T

J

= 125°C

E

o ,

200A

E

on2,

200A

E

o ,

100A

E

on2,

100A

E

o ,

50A

E

on2,

50A

Typical Performance Curves APT100GT60B2R_LR(G)

052-6297 Rev C 3 - 2012

0.30

0.25

0.20

0.15

0.10

0.05

0

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

0.3

0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 19a, Maximum E ective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

10,000

5,000

1,000

500

100

350

300

250

200

150

100

50

0

C, CAPACITANCE (

P

F)

I

C

, COLLECTOR CURRENT (A)

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V

CE

, COLLECTOR TO EMITTER VOLTAGE

Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area

0 10 20 30 40 50 0 100 200 300 400 500 600 700

FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL

10 20 30 40 50 60 70 80 90 100

F

MAX

, OPERATING FREQUENCY (kHz)

I

C

, COLLECTOR CURRENT (A)

Figure 20, Operating Frequency vs Collector Current

100

50

10

5

1

C

0es

C

res

0.5

0.1

0.05

F

max

= min (f

max

, f

max2

)

0.05

f

max1

=

t

d(on)

+ t

r

+ t

d(off)

+ t

f

P

diss

- P

cond

E

on2

+ E

off

f

max2

=

P

diss

=

T

J

- T

C

R

θJC

C

ies

T

J

= 125°C

D = 50 %

V

CE

= 400V

R

G

= 4.3Ω

Peak T

J

= P

DM

x Z

θJC

+

T

C

Duty Factor D =

t

1

/

t

2

t

2

t

1

P

DM

Note:

T

C

= 75°C

T

C

= 100°C

0.0587 0.132 0.0587

0.0120 0.420 4.48

Dissipated Powe r

(Watts )

T

J

(°C) T

C

(°C)

Z

EX T

are the external therma l

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling onl y

the case to junction.

Z

EX T

052-6297 Rev C 3 - 2012

APT100GT60B2R_LR(G)

Figure 22, Turn-on Switching Waveforms and De nitions

Figure 23, Turn-o Switching Waveforms and De nitions

T

J

= 125°C

Collector Current

CollectorVoltage

Gate Voltage

Switching Energy

5%

10%

t

d(on)

90%

10%

t

r

5%

T

J

= 125°C

CollectorVoltage

Collector Current

Gate Voltage

Switching Energy

0

90%

t

d(o )

10%

t

f

90%

I

C

A

D.U.T.

V

CE

Figure 21, Inductive Switching Test Circui t

V

CC

APT100DQ60

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Gate

These dimensions are equal to the TO-247 without the mounting hole.

2-Plcs.

19.51 (.768)

20.50 (.807)

19.81 (.780)

21.39 (.842)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

3.10 (.122)

3.48 (.137)

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

2.59 (.102)

3.00 (.118)

0.48 (.019)

0.84 (.033)

Collector

Emitter

Gate

Dimensions in Millimeters and (Inches)

2.29 (.090)

2.69 (.106)

5.79 (.228)

6.20 (.244)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

Collector

Emitter

Collector

T-MAX

TM

(B2) Package Outline

TO-264 (L) Package Outline

APT100GT60B2RG

APT100GT60B2RG

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