13
LTC1778/LTC1778-1
1778fb
ripple. Highest efficiency operation is obtained at low
frequency with small ripple current. However, achieving
this requires a large inductor. There is a tradeoff between
component size, efficiency and operating frequency.
A reasonable starting point is to choose a ripple current
that is about 40% of I
OUT(MAX)
. The largest ripple current
occurs at the highest V
IN
. To guarantee that ripple current
does not exceed a specified maximum, the inductance
should be chosen according to:
L
V
fI
V
V
OUT
LMAX
OUT
IN MAX
=
() ()
1
Once the value for L is known, the type of inductor must
be selected. High efficiency converters generally cannot
afford the core loss found in low cost powdered iron
cores, forcing the use of more expensive ferrite, molyper-
malloy or Kool Mµ
®
cores. A variety of inductors designed
for high current, low voltage applications are available
from manufacturers such as Sumida, Panasonic, Coil-
tronics, Coilcraft and Toko.
Schottky Diode D1 Selection
The Schottky diode D1 shown in Figure 1 conducts during
the dead time between the conduction of the power
MOSFET switches. It is intended to prevent the body diode
of the bottom MOSFET from turning on and storing charge
during the dead time, which can cause a modest (about
1%) efficiency loss. The diode can be rated for about one
half to one fifth of the full load current since it is on for only
a fraction of the duty cycle. In order for the diode to be
effective, the inductance between it and the bottom MOS-
FET must be as small as possible, mandating that these
components be placed adjacently. The diode can be omit-
ted if the efficiency loss is tolerable.
C
IN
and C
OUT
Selection
The input capacitance C
IN
is required to filter the square
wave current at the drain of the top MOSFET. Use a low
ESR capacitor sized to handle the maximum RMS current.
II
V
V
V
V
RMS OUT MAX
OUT
IN
IN
OUT
()
–1
This formula has a maximum at V
IN
= 2V
OUT
, where
I
RMS
= I
OUT(MAX)
/ 2. This simple worst-case condition is
commonly used for design because even significant
deviations do not offer much relief. Note that ripple
current ratings from capacitor manufacturers are often
based on only 2000 hours of life which makes it advisable
to derate the capacitor.
The selection of C
OUT
is primarily determined by the ESR
required to minimize voltage ripple and load step
transients. The output ripple V
OUT
is approximately
bounded by:
∆≤ +
V I ESR
fC
OUT L
OUT
1
8
Since I
L
increases with input voltage, the output ripple is
highest at maximum input voltage. Typically, once the ESR
requirement is satisfied, the capacitance is adequate for
filtering and has the necessary RMS current rating.
Multiple capacitors placed in parallel may be needed to
meet the ESR and RMS current handling requirements.
Dry tantalum, special polymer, aluminum electrolytic and
ceramic capacitors are all available in surface mount
packages. Special polymer capacitors offer very low ESR
but have lower capacitance density than other types.
Tantalum capacitors have the highest capacitance density
but it is important to only use types that have been surge
tested for use in switching power supplies. Aluminum
electrolytic capacitors have significantly higher ESR, but
can be used in cost-sensitive applications providing that
consideration is given to ripple current ratings and long
term reliability. Ceramic capacitors have excellent low
ESR characteristics but can have a high voltage coefficient
and audible piezoelectric effects. The high Q of ceramic
capacitors with trace inductance can also lead to signifi-
cant ringing. When used as input capacitors, care must be
taken to ensure that ringing from inrush currents and
switching does not pose an overvoltage hazard to the
power switches and controller. To dampen input voltage
transients, add a small 5µF to 50µF aluminum electrolytic
capacitor with an ESR in the range of 0.5 to 2. High
performance through-hole capacitors may also be used,
APPLICATIO S I FOR ATIO
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Kool Mµ is a registered trademark of Magnetics, Inc.
14
LTC1778/LTC1778-1
1778fb
but an additional ceramic capacitor in parallel is recom-
mended to reduce the effect of their lead inductance.
Top MOSFET Driver Supply (C
B
, D
B
)
An external bootstrap capacitor C
B
connected to the BOOST
pin supplies the gate drive voltage for the topside MOSFET.
This capacitor is charged through diode D
B
from INTV
CC
when the switch node is low. When the top MOSFET turns
on, the switch node rises to V
IN
and the BOOST pin rises
to approximately V
IN
+ INTV
CC
. The boost capacitor needs
to store about 100 times the gate charge required by the
top MOSFET. In most applications 0.1µF to 0.47µF, X5R or
X7R dielectric capacitor is adequate.
Discontinuous Mode Operation and FCB Pin
The FCB pin determines whether the bottom MOSFET
remains on when current reverses in the inductor. Tying
this pin above its 0.8V threshold enables discontinuous
operation where the bottom MOSFET turns off when
inductor current reverses. The load current at which
current reverses and discontinuous operation begins de-
pends on the amplitude of the inductor ripple current and
will vary with changes in V
IN
. Tying the FCB pin below the
0.8V threshold forces continuous synchronous operation,
allowing current to reverse at light loads and maintaining
high frequency operation.
In addition to providing a logic input to force continuous
operation, the FCB pin provides a means to maintain a
flyback winding output when the primary is operating in
discontinuous mode. The secondary output V
OUT2
is nor-
mally set as shown in Figure 6 by the turns ratio N of the
transformer. However, if the controller goes into discon-
tinuous mode and halts switching due to a light primary
load current, then V
OUT2
will droop. An external resistor
divider from V
OUT2
to the FCB pin sets a minimum voltage
V
OUT2(MIN)
below which continuous operation is forced
until V
OUT2
has risen above its minimum.
VV
R
R
OUT MIN2
08 1
4
3
()
.=+
Fault Conditions: Current Limit and Foldback
The maximum inductor current is inherently limited in a
current mode controller by the maximum sense voltage. In
the LTC1778, the maximum sense voltage is controlled by
the voltage on the V
RNG
pin. With valley current control,
the maximum sense voltage and the sense resistance
determine the maximum allowed inductor valley current.
The corresponding output current limit is:
I
V
R
I
LIMIT
SNS MAX
DS ON T
L
=+
()
()
ρ
1
2
The current limit value should be checked to ensure that
I
LIMIT(MIN)
> I
OUT(MAX)
. The minimum value of current limit
generally occurs with the largest V
IN
at the highest ambi-
ent temperature, conditions that cause the largest power
loss in the converter. Note that it is important to check for
self-consistency between the assumed MOSFET junction
temperature and the resulting value of I
LIMIT
which heats
the MOSFET switches.
Caution should be used when setting the current limit
based upon the R
DS(ON)
of the MOSFETs. The maximum
current limit is determined by the minimum MOSFET on-
resistance. Data sheets typically specify nominal and
maximum values for R
DS(ON)
, but not a minimum. A
reasonable assumption is that the minimum R
DS(ON)
lies
the same amount below the typical value as the maximum
lies above it. Consult the MOSFET manufacturer for further
guidelines.
To further limit current in the event of a short circuit to
ground, the LTC1778 includes foldback current limiting. If
the output falls by more than 25%, then the maximum
sense voltage is progressively lowered to about one sixth
of its full value.
APPLICATIO S I FOR ATIO
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Figure 6. Secondary Output Loop and EXTV
CC
Connection
V
IN
LTC1778
SGND
FCB
EXTV
CC
TG
SW
OPTIONAL
EXTV
CC
CONNECTION
5V < V
OUT2
< 7V
R3
R4
1778 F06
T1
1:N
BG
PGND
+
C
OUT2
1µF
V
OUT1
V
OUT2
V
IN
+
C
IN
1N4148
+
C
OUT
15
LTC1778/LTC1778-1
1778fb
INTV
CC
Regulator
An internal P-channel low dropout regulator produces the
5V supply that powers the drivers and internal circuitry
within the LTC1778. The INTV
CC
pin can supply up to
50mA RMS and must be bypassed to ground with a
minimum of 4.7µF low ESR tantalum capacitor. Good
bypassing is necessary to supply the high transient cur-
rents required by the MOSFET gate drivers. Applications
using large MOSFETs with a high input voltage and high
frequency of operation may cause the LTC1778 to exceed
its maximum junction temperature rating or RMS current
rating. Most of the supply current drives the MOSFET
gates unless an external EXTV
CC
source is used. In con-
tinuous mode operation, this current is I
GATECHG
= f(Q
g(TOP)
+ Q
g(BOT)
). The junction temperature can be estimated
from the equations given in Note 2 of the Electrical
Characteristics. For example, the LTC1778CGN is limited
to less than 14mA from a 30V supply:
T
J
= 70°C + (14mA)(30V)(130°C/W) = 125°C
For larger currents, consider using an external supply with
the EXTV
CC
pin.
EXTV
CC
Connection
The EXTV
CC
pin can be used to provide MOSFET gate drive
and control power from the output or another external
source during normal operation. Whenever the EXTV
CC
pin is above 4.7V the internal 5V regulator is shut off and
an internal 50mA P-channel switch connects the EXTV
CC
pin to INTV
CC
. INTV
CC
power is supplied from EXTV
CC
until
this pin drops below 4.5V. Do not apply more than 7V to
the EXTV
CC
pin and ensure that EXTV
CC
V
IN
. The follow-
ing list summarizes the possible connections for EXTV
CC
:
1. EXTV
CC
grounded. INTV
CC
is always powered from the
internal 5V regulator.
2. EXTV
CC
connected to an external supply. A high effi-
ciency supply compatible with the MOSFET gate drive
requirements (typically 5V) can improve overall
efficiency.
3. EXTV
CC
connected to an output derived boost network.
The low voltage output can be boosted using a charge
pump or flyback winding to greater than 4.7V. The system
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will start-up using the internal linear regulator until the
boosted output supply is available.
External Gate Drive Buffers
The LTC1778 drivers are adequate for driving up to about
30nC into MOSFET switches with RMS currents of 50mA.
Applications with larger MOSFET switches or operating at
frequencies requiring greater RMS currents will benefit
from using external gate drive buffers such as the LTC1693.
Alternately, the external buffer circuit shown in Figure 7
can be used. Note that the bipolar devices reduce the
signal swing at the MOSFET gate, and benefit from an
increased EXTV
CC
voltage of about 6V.
Figure 7. Optional External Gate Driver
Q1
FMMT619
GATE
OF M1
TG
BOOST
SW
Q2
FMMT720
Q3
FMMT619
GATE
OF M2
BG
1778 F07
INTV
CC
PGND
Q4
FMMT720
10 10
Soft-Start and Latchoff with the RUN/SS Pin
The RUN/SS pin provides a means to shut down the
LTC1778 as well as a timer for soft-start and overcurrent
latchoff. Pulling the RUN/SS pin below 0.8V puts the
LTC1778 into a low quiescent current shutdown (I
Q
<
30µA). Releasing the pin allows an internal 1.2µA current
source to charge up the external timing capacitor C
SS
. If
RUN/SS has been pulled all the way to ground, there is a
delay before starting of about:
t
V
A
CsFC
DELAY SS SS
=
µ
()
15
12
13
.
.
./
When the voltage on RUN/SS reaches 1.5V, the LTC1778
begins operating with a clamp on I
TH
of approximately
0.9V. As the RUN/SS voltage rises to 3V, the clamp on I
TH
is raised until its full 2.4V range is available. This takes an
additional 1.3s/µF, during which the load current is folded
back until the output reaches 75% of its final value. The pin
can be driven from logic as shown in Figure 7. Diode D1

LTC1778IGN#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators Synchronous Step down Controller
Lifecycle:
New from this manufacturer.
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