TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
1
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 200 µA
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave whe
n the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
TINUEULAVLOBMYSGNITAR
Repetitive peak off-state voltage (see Note 1)
TIC106D
TIC106M
TIC106S
TIC106N
V
DRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC106D
TIC106M
TIC106S
TIC106N
V
RRM
400
600
700
800
V
I)2 etoN ees( erutarepmet esac C°08 )woleb ro( ta tnerruc etats-no suounitnoC
T(RMS)
5 A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
I
T(AV)
3.2 A
Surge on-state current at I)4 etoN ees( C°52 )woleb ro(
TSM
30 A
Peak positive gate current (pulse width ≤ 300 µ I)s
GM
0.2 A
Peak gate power dissipation (pulse width ≤ 300 µ P)s
GM
1.3 W
Average gate power dissipation (see P)5 etoN
G(AV)
0.3 W
Tegnar erutarepmet esac gnitarepO
C
-40 to +110 °C
Storage temperature range T
stg
-40 to +125 °C
Tsdnoces 01 rof esac morf mm 6.1 erutarepmet daeL
L
230 °C
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
This series is obsolete and
not recommended for new designs.
