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TIC106M-S

P1-P3P4-P4
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 5. Figure 6.
Figure 7.
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - °C
-50-25 0 255075100125
V
GT
- Gate Trigger Voltage - V
0·2
0·4
0·6
0·8
0
1
TC20AB
CASE TEMPERATURE
vs
V
AA
= 12 V
R
L
= 100
Ω
R
GK
= 1 kΩ
t
p(g)
≥ 20 µs
HOLDING CURRENT
T
C
- Case Temperature - °C
-50 -25 0 25 50 75 100 125
I
H
-
H
o
ldi
ng
C
urren
t
- m
A
0.1
1
10
TC20AD
CASE TEMPERATURE
vs
V
AA
= 12 V
R
GK
= 1 kΩ
Initiating I
T
= 10 mA
PEAK ON-STATE VOLTAGE
I
TM
- Peak On-State Current - A
0·1 1 10
V
TM
- Peak On-State Voltage - V
0.0
0.5
1.0
1.5
2.0
2.5
TC20AE
vs
PEAK ON-STATE CURRENT
T
C
= 25 °C
t
p
= 300 µs
Duty Cycle
≤
2 %
OBSOLETE
P1-P3P4-P4

TIC106M-S

Mfr. #:
Buy TIC106M-S
Manufacturer:
Bourns
Description:
THYRISTOR SCR 600V 5A
Lifecycle:
New from this manufacturer.
Delivery:
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