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ADG613YRUZ-REEL7

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
1 pC Charge Injection, 100 pA Leakage,
CMOS, ±5 V/+5 V/+3 V, Quad SPST Switches
ADG611/ADG612/ADG613
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2002–2009 Analog Devices, Inc. All rights reserved.
FEATURES
1 pC charge injection
±2.7 V to ±5.5 V dual-supply operation
+2.7 V to +5.5 V single-supply operation
Automotive temperature range: −40°C to +125°C
100 pA maximum at 25°C leakage currents
85 Ω on resistance
Rail-to-rail switching operation
Fast switching times
16-lead TSSOP and SOIC packages
Typical power consumption: <0.1 μW
TTL-/CMOS-compatible inputs
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered systems
Communications systems
Sample-and-hold systems
Audio signal routing
Relay replacement
Avionics
FUNCTIONAL BLOCK DIAGRAM
NOTES
1. SWITCHES SHOWN FOR A LOGIC 1 INPUT.
IN1
IN2
IN
3
IN4
S1
D1
S2
D2
S3
D3
S4
D4
ADG611
IN1
IN2
IN3
IN4
S1
D1
S2
D2
S3
D3
S4
D4
ADG612
IN1
IN2
IN3
IN4
S1
D1
S2
D2
S3
D3
S4
D4
ADG613
02753-001
Figure 1.
GENERAL DESCRIPTION
The ADG611/ADG612/ADG613 are monolithic CMOS devices
containing four independently selectable switches. These switches
offer ultralow charge injection of 1 pC over the full input signal
range and typical leakage currents of 10 pA at 25°C.
The devices are fully specified for ±5 V, +5 V, and +3 V supplies.
Each contains four independent single-pole, single-throw (SPST)
switches. The ADG611 and ADG612 differ only in that the digital
control logic is inverted. The ADG611 switches are turned on
with a logic low on the appropriate control input, whereas a
logic high is required to turn on the switches of the ADG612.
The ADG613 contains two switches with digital control logic
similar to that of the ADG611 and two switches in which the
logic is inverted.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG613 exhibits break-before-make switching action. The
ADG611/ADG612/ADG613 are available in a small, 16-lead
TSSOP package, and the ADG611 is also available in a 16-lead
SOIC package.
PRODUCT HIGHLIGHTS
1. Ultralow charge injection (1 pC typically).
2. Dual ±2.7 V to ±5.5 V or single +2.7 V to +5.5 V operation.
3. Automotive temperature range: −40°C to +125°C.
4. Small, 16-lead TSSOP and SOIC packages.
ADG611/ADG612/ADG613
Rev. A | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Dual-Supply Operation ............................................................... 3
Single-Supply Operation ............................................................. 4
Absolute Maximum Ratings ............................................................6
ESD Caution...................................................................................6
Pin Configuration and Function Descriptions ..............................7
Typical Performance Characteristics ..............................................8
Terminology .................................................................................... 10
Test Circuits ..................................................................................... 11
Applications Information .............................................................. 13
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 14
REVISION HISTORY
11/09—Rev. 0 to Rev. A
Changes to Analog Signal Range Parameter
and to On Resistance, R
ON
Parameter, Table 1 .......................... 3
Change to Digital Input Capacitance, C
IN
Parameter, Table 2 .... 4
Changes to Table 4 and to Absolute Maximum Ratings Section ...... 6
Added Table 5; Renumbered Sequentially .................................... 7
Updated Outline Dimensions ....................................................... 14
Changes to Ordering Guide .......................................................... 14
1/02—Revision 0: Initial Version
ADG611/ADG612/ADG613
Rev. A | Page 3 of 16
SPECIFICATIONS
DUAL-SUPPLY OPERATION
V
DD
= +5 V ± 10%, V
SS
= −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter +25°C −40°C to +85°C −40°C to +125°C
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V
On Resistance, R
ON
85 Ω typ V
S
= ±3 V, I
S
= −1 mA; see Figure 14
115 140 160 Ω max V
S
= ±3 V, I
S
= −1 mA; see Figure 14
On-Resistance Match
Between Channels, ΔR
ON
2 Ω typ V
S
= ±3 V, I
S
= −1 mA
4 5.5 6.5 Ω max V
S
= ±3 V, I
S
= −1 mA
On-Resistance Flatness, R
FLAT(ON)
25 Ω typ V
S
= ±3 V, I
S
= −1 mA
40 55 60 Ω max V
S
= ±3 V, I
S
= −1 mA
LEAKAGE CURRENTS V
DD
= +5.5 V, V
SS
= −5.5 V
Source Off Leakage, I
S(OFF)
±0.01 nA typ
V
D
= ±4.5 V, VS =
+
4.5 V; see Figure 15
±0.1 ±0.25 ±2 nA max
V
D
= ±4.5 V, VS =
+
4.5 V; see Figure 15
Drain Off Leakage, I
D(OFF)
±0.01 nA typ
V
D
= ±4.5 V, V
S
=
+
4.5 V; see Figure 15
±0.1 ±0.25 ±2 nA max
V
D
= ±4.5 V, V
S
=
+
4.5 V; see Figure 15
Channel On Leakage, I
D(ON)
, I
S(ON)
±0.01 nA typ V
D
= V
S
= ±4.5 V; see Figure 16
±0.1 ± 0.25 ± 6 nA max V
D
= V
S
= ±4.5 V; see Figure 16
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max V
IN
= V
INL
or V
INH
Digital Input Capacitance, C
IN
2 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
45 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S
= 3.0 V; see Figure 17
65 75 90 ns max R
L
= 300 Ω, C
L
= 35 pF, V
S
= 3.0 V; see Figure 17
t
OFF
25 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S
= 3.0 V; see Figure 17
40 45 50 ns max R
L
= 300 Ω, C
L
= 35 pF, V
S
= 3.0 V; see Figure 17
Break-Before-Make Time Delay, t
BBM
15 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S1
= V
S2
= 3.0 V; see Figure 18
10 ns min R
L
= 300 Ω, C
L
= 35 pF, V
S1
= V
S2
= 3.0 V; see Figure 18
Charge Injection −0.5 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 19
Off Isolation −65 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 20
Channel-to-Channel Crosstalk −90 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 21
−3 dB Bandwidth 680 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 22
C
S(OFF)
5 pF typ f = 1 MHz
C
D(OFF)
5 pF typ f = 1 MHz
C
D(ON)
, C
S(ON)
5 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= +5.5 V, V
SS
= −5.5 V
I
DD
0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 μA max Digital inputs = 0 V or 5.5 V
I
SS
0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 μA max Digital inputs = 0 V or 5.5 V
1
The temperature range for the Y version is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

ADG613YRUZ-REEL7

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Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 85 Ohm 5.5V CMOS Quad SPST
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