ADG611/ADG612/ADG613
Rev. A | Page 4 of 16
SINGLE-SUPPLY OPERATION
V
DD
= 5 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter +25°C −40°C to +85°C 40°C to +125°C
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
On Resistance, R
ON
210 Ω typ V
S
= 3.5 V, I
S
= −1 mA; see Figure 14
290 350 380 Ω max V
S
= 3.5 V, I
S
= −1 mA; see Figure 14
On-Resistance Match
Between Channels, ΔR
ON
3 Ω typ V
S
= 3.5 V, I
S
= −1 mA
10 12 13 Ω max V
S
= 3.5 V, I
S
= −1 mA
LEAKAGE CURRENTS V
DD
= 5.5 V
Source Off Leakage, I
S(OFF)
±0.01 nA typ V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V; see Figure 15
±0.1 ±0.25 ±2 nA max V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V; see Figure 15
Drain Off Leakage, I
D(OFF)
±0.01 nA typ V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V; see Figure 15
±0.1 ±0.25 ±2 nA max V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V; see Figure 15
Channel On Leakage, I
D(ON)
, I
S(ON)
±0.01 nA typ V
S
= V
D
= 1 V or 4.5 V; see Figure 16
±0.1 ±0.25 ±6 nA max V
S
= V
D
= 1 V or 4.5 V; see Figure 16
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max V
IN
= V
INL
or V
INH
Digital Input Capacitance, C
IN
2 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
70 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S
= 3.0 V; see Figure 17
100 130 150 ns max R
L
= 300 Ω, C
L
= 35 pF, V
S
= 3.0 V; see Figure 17
t
OFF
25 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S
= 3.0 V; see Figure 17
40 45 50 ns max R
L
= 300 Ω, C
L
= 35 pF, V
S
= 3.0 V; see Figure 17
Break-Before-Make Time Delay, t
BBM
25 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S1
= V
S2
= 3.0 V; see Figure 18
10 ns min R
L
= 300 Ω, C
L
= 35 pF, V
S1
= V
S2
= 3.0 V; see Figure 18
Charge Injection 1 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 19
Off Isolation −62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 20
Channel-to-Channel Crosstalk −90 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 21
−3 dB Bandwidth 680 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 22
C
S(OFF)
5 pF typ f = 1 MHz
C
D(OFF)
5 pF typ f = 1 MHz
C
D(ON)
, C
S(ON)
5 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V
I
DD
0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 μA max Digital inputs = 0 V or 5.5 V
1
The temperature range for the Y version is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
ADG611/ADG612/ADG613
Rev. A | Page 5 of 16
V
DD
= 3 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter +25°C −40°C to +85°C −40°C to +125°C
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
On Resistance, R
ON
380 420 460 Ω typ V
S
= 1.5 V, I
S
= −1 mA; see Figure 14
LEAKAGE CURRENTS V
DD
= 3.3 V
Source Off Leakage, I
S(OFF)
±0.01 nA typ V
S
= 1 V/3 V, V
D
= 3 V/1 V; see Figure 15
±0.1 ±0.25 ± 2 nA max V
S
= 1 V/3 V, V
D
= 3 V/1 V; see Figure 15
Drain Off Leakage, I
D(OFF)
±0.01 nA typ V
S
= 1 V/3 V, V
D
= 3 V/1 V; see Figure 15
±0.1 ±0.25 ±2 nA max V
S
= 1 V/3 V, V
D
= 3 V/1 V; see Figure 15
Channel On Leakage, I
D(ON)
, I
S(ON)
±0.01 nA typ V
S
= V
D
= 1 V or 3 V; see Figure 16
±0.1 ±0.25 ±6 nA max V
S
= V
D
= 1 V or 3 V; see Figure 16
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max V
IN
= V
INL
or V
INH
Digital Input Capacitance, C
IN
2 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
130 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S
= 2 V; see Figure 17
185 230 260 ns max R
L
= 300 Ω, C
L
= 35 pF, V
S
= 2 V; see Figure 17
t
OFF
40 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S
= 2 V; see Figure 17
55 60 65 ns max R
L
= 300 Ω, C
L
= 35 pF, V
S
= 2 V; see Figure 17
Break-Before-Make Time Delay, t
BBM
50 ns typ R
L
= 300 Ω, C
L
= 35 pF, V
S1
= V
S2
= 2 V; see Figure 18
10 ns min R
L
= 300 Ω, C
L
= 35 pF, V
S1
= V
S2
= 2 V; see Figure 18
Charge Injection 1.5 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 19
Off Isolation −62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 20
Channel-to-Channel Crosstalk −90 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 21
−3 dB Bandwidth 680 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 22
C
S(OFF)
5 pF typ f = 1 MHz
C
D(OFF)
5 pF typ f = 1 MHz
C
D(ON)
, C
S(ON)
5 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.3 V
I
DD
0.001 μA typ Digital inputs = 0 V or 3.3 V
1.0 μA max Digital inputs = 0 V or 3.3 V
1
The temperature range for the Y version is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
ADG611/ADG612/ADG613
Rev. A | Page 6 of 16
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted
Table 4.
Parameter Rating
V
DD
to V
SS
13 V
V
DD
to GND −0.3 V to +6.5 V
V
SS
to GND +0.3 V to −6.5 V
Analog Inputs
1
V
SS
− 0.3 V to V
DD
+ 0.3 V
Digital Inputs
1
GND − 0.3 V to V
DD
+ 0.3 V or
30 mA, whichever occurs first
Peak Current, S or D
20 mA (pulsed at 1 ms, 10%
duty cycle maximum)
Continuous Current, S or D 10 mA
3 V operation 85°C to 125°C 7.5 mA
Operating Temperature Range
Automotive (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
θ
JA
Thermal Impedance
16-Lead TSSOP 150.4°C/W
16-Lead SOIC, 4-Layer Board 80.6°C/W
Lead Soldering
Lead Temperature, Soldering
(10 sec)
300°C
IR Reflow, Peak Temperature
(<20 sec)
220°C
(Pb-Free) Soldering
Reflow, Peak Temperature 260(+0/−5)°C
Time at Peak Temperature 20 sec to 40 sec
1
Overvoltages at IN, S, or D are clamped by internal diodes. The current
should be limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating can be applied at any one time.
ESD CAUTION

ADG613YRUZ-REEL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 85 Ohm 5.5V CMOS Quad SPST
Lifecycle:
New from this manufacturer.
Delivery:
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