N0439N
R07DS1065EJ0100 Rev.1.00 Page 2 of 6
Jun 13, 2013
Electrical Characteristics (T
A
= 25°C)
Item Symbol Min. Typ. Max. Unit Test Conditions
Zero Gate Voltage Drain Current I
DSS
1
μ
A VDS = 40V, VGS = 0 V
Gate Leakage Current I
GSS
±100 nA VGS = ± 20 V, VDS = 0 V
Gate to Source Threshold Voltage V
GS(th)
2.0 3.0 4.0 V VDS = VGS, ID = 250
μ
A
Forward Transfer Admittance
*1
| y
fs
| 30 S VDS = 5 V, ID = 45 A
Drain to Source On-state Resistance
*1
R
DS(on)
2.75 3.30 mΩ VGS = 10 V, ID = 45 A
Input Capacitance C
iss
3900 5850 pF VDS = 25 V
V
GS = 0 V
f = 1 MHz
Output Capacitance C
oss
530 800 pF
Reverse Transfer Capacitance C
rss
200 360 pF
Turn-on Delay Time t
d(on)
25 60 ns VDD = 20V, ID = 45 A
V
GS = 10 V
R
G = 0 Ω
Rise Time t
r
12 30 ns
Turn-off Delay Time t
d(off)
65 130 ns
Fall Time t
f
8 20 ns
Total Gate Charge Q
G
68 102 nC VDD = 32V
V
GS = 10 V
I
D = 90 A
Gate to Source Charge Q
GS
18 nC
Gate to Drain Charge Q
GD
18 nC
Body Diode Forward Voltage
*1
V
F(S-D)
0.95 1.5 V IF = 90 A, VGS = 0 V
Reverse Recovery Time t
rr
47 ns IF = 90 A, VGS = 0 V
di/dt = 100 A/
μ
s
Reverse Recovery Charge Q
rr
68 nC
Note: *1. Pulsed test
TEST CIRCUIT 3 GATE CHARGE
VGS = 20 → 0 V
PG.
R
G = 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50 Ω
D.U.T.
R
L
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle ≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
VGS
VDS
ton toff
td(on) tr td(off) tf
10% 10%
μ
