N0439N
R07DS1065EJ0100 Rev.1.00 Page 5 of 6
Jun 13, 2013
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
1
2
3
4
5
6
-100 0 100 200
V
GS
=10V
I
D
=45A
Pulsed
T
ch
- Channel Temperature - °C
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
1000
10000
0.1 1 10 100
Ciss
Coss
Crss
V
GS
=0V
f=1MHz
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on),tr,td(off),tr – Switching Time - ns
1
10
100
1000
0.1 1 10 100
V
DD
=20V
V
GS
=10V
R
G
=0Ω
t
d(of f )
t
d(on)
t
r
t
f
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
0
5
10
15
20
25
30
35
0 10203040506070
0
2
4
6
8
10
12
14
V
GS
V
DS
V
DD
=32
20
8
I
D
=90A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Forward Current - A
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Pulsed
V
GS
=0V
V
GS
=10V
V
F(S-D)
- Source to Drain Voltage - V
t
rr
– Reverse Recovery Time - ns
1
10
100
0.1 1 10 100
di/dt=100A/u
ｓ
V
GS
=0V
I
F
- Drain Current - A
