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SI4630DY-T1-E3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 73685
S09-0138-Rev. C, 02-Feb-09
Vishay Siliconix
Si4630DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.001
0.00 0.2 0.4 0.6 0.8
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC ecruoS -I
S
0.100
0.010
1.000
10.000
100.000
25 °C
150 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
V
)
h
t(
S
G
)
V(
I
D
= 250 µA
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
012345678 910
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω ecnatsiseR-nO ecruoS-ot-niarD -)
0
.
010
0.008
0.006
0.004
0.002
0.000
125 °C
25 °C
0
120
200
40
80
)
W
(
r
e
w
o
P
Time (s)
160
1 10 0.1 0.01 0.001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
)
A( tnerruC
n
iarD-
I
D
0.1
1 ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Limited by R
DS(on)*
Document Number: 73685
S09-0138-Rev. C, 02-Feb-09
www.vishay.com
5
Vishay Siliconix
Si4630DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
30
35
40
45
0 255075100125150
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
Package Limited
Power, Junction-to-Foot
0
2
4
6
8
10
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
r (W)e
w
o P
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
r (W)e
w
o P
www.vishay.com
6
Document Number: 73685
S09-0138-Rev. C, 02-Feb-09
Vishay Siliconix
Si4630DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73685
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 100010
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
f
f
E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 60 °C/W
3. T
JM
– T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
0.2
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v
i
t c e
f
f
E d e
z
i l a m r o N
e c n a d e p m I
l a
m r e
h T
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
Single Pulse
0.02
10
0.05
P1-P3P4-P6P7-P9

SI4630DY-T1-E3

Mfr. #:
Buy SI4630DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 25V Vds 16V Vgs SO-8
Lifecycle:
New from this manufacturer.
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