Characteristics FERD20U50
2/8 DocID026021 Rev 3
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.25 x I
F(AV)
+ 0.011 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified anode terminals
short-circuited)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 50 V
I
F(RMS)
Forward rms current 45 A
I
F(AV)
Average forward current, δ = 0.5 T
c
= 115 °C 20 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 390 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
(1)
Maximum operating junction temperature
PowerFlat 5x6 150
°C
PowerFlat 5x6 (DC forward current
without reverse bias, t = 1 hour)
200
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol Parameter Value (max) Unit
R
th(j-c)
Junction to case 2.6 °C/W
Table 4. Static electrical characteristics (anode terminals short-circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-800µA
T
j
= 125 °C - 30 60 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
-0.37
V
T
j
= 125 °C - 0.33
T
j
= 25 °C
I
F
= 20 A
- 0.45 0.51
T
j
= 125 °C - 0.44
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
