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NCV3030ADR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
© Semiconductor Components Industries, LLC, 2011
July, 2018 − Rev. 2
1 Publication Order Number:
NCP3030/D
NCP3030A, NCP3030B,
NCV3030A, NCV3030B
Synchronous PWM Controller
The NCP3030 is a PWM device designed to operate from a wide
input range and is capable of producing an output voltage as low as
0.6 V. The NCP3030 provides integrated gate drivers and an internally
set 1.2 MHz (NCP3030A) or 2.4 MHz (NCP3030B) oscillator. The
NCP3030 also has an externally compensated transconductance error
amplifier with an internally fixed soft−start. Protection features
include lossless current limit and short circuit protection, output
overvoltage protection, output undervoltage protection, and input
undervoltage lockout. The NCP3030 is currently available in a
SOIC−8 package.
Features
• Input Voltage Range from 4.7 V to 28 V
• 1.2 MHz Operation (NCP3030B – 2.4 MHz)
• 0.8 V Internal Reference Voltage
• Internally Programmed 1.8 ms Soft−Start (NCP3030B – 1.3 ms)
• Current Limit and Short Circuit Protection
• Transconductance Amplifier with External Compensation
• Input Undervoltage Lockout
• Output Overvoltage and Undervoltage Detection
• NCV Prefix for Automotive and Other Applications Requiring Site
and Change Controls
• These are Pb−Free Devices
Figure 1. Typical Application Circuit
COMP
FB
VCC BST
HSDR
VSW
LSDR
GND
Q1
Q2
Vout
C
C1
C
C2
C
IN
R
ISET
R
C
C
BST
R
FB1
R
FB2
C
0
L
0
V
IN
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NCP3030ADR2G SOIC−8
(Pb−Free)
2500 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOIC−8 NB
CASE 751
MARKING DIAGRAM
3030x
ALYW
G
1
8
3030x = Specific Device Code
x = A or B
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
1
8
PIN CONNECTIONS
LSDRGND
VSWFB
HSDRCOMP
BST
V
CC
NCP3030BDR2G SOIC−8
(Pb−Free)
2500 / Tape & Ree
l
NCV3030ADR2G SOIC−8
(Pb−Free)
2500 / Tape & Ree
l
NCV3030BDR2G SOIC−8
(Pb−Free)
2500 / Tape & Ree
l
NCP3030A, NCP3030B, NCV3030A, NCV3030B
www.onsemi.com
2
GATE
DRIVE
LOGIC
VC
CLK/
DMAX/
SOFT
START
OOV
BOOST
CLAMP
LEVEL
SHIFT
SAMPLE &
HOLD
VC
HSDR
LSDR
GND
−
+
−
+
−
+
VCC
COMP
FB
REF
RAMP
OSCILLATOR
BST
VSW
VCC
Figure 2. NCP3030 Block Diagram
INTERNAL BIAS
ISET
1.5 V
BST_CHRG
THERMAL SD
POR/STARTUP
OTA
PWM
COMP
OUV
CURRENT
LIMIT
PIN FUNCTION DESCRIPTION
Pin Pin Name Description
1 V
CC
The V
CC
pin is the main voltage supply input. It is also used in conjunction with the VSW pin to sense current
in the high side MOSFET.
2 COMP The COMP pin connects to the output of the Operational Transconductance Amplifier (OTA) and the positive
terminal of the PWM comparator. This pin is used in conjunction with the FB pin to compensate the voltage
mode control feedback loop.
3 FB The FB pin is connected to the inverting input of the OTA. This pin is used in conjunction with the COMP pin to
compensate the voltage mode control feedback loop.
4 GND Ground Pin
5 LSDR The LSDR pin is connected to the output of the low side driver which connects to the gate of the low side
N−FET. It is also used to set the threshold of the current limit circuit (I
SET
) by connecting a resistor from LSDR
to GND.
6 VSW The VSW pin is the return path for the high side driver. It is also used in conjunction with the V
CC
pin to sense
current in the high side MOSFET.
7 HSDR The HSDR pin is connected to the output of the high side driver which connects to the gate of the high side
N−FET.
8 BST The BST pin is the supply rail for the gate drivers. A capacitor must be connected between this pin and the
VSW pin.
NCP3030A, NCP3030B, NCV3030A, NCV3030B
www.onsemi.com
3
ABSOLUTE MAXIMUM RATINGS (measured vs. GND pin 8, unless otherwise noted)
Rating
Symbol V
MAX
V
MIN
Unit
High Side Drive Boost Pin BST 45 −0.3 V
Boost to V
SW
differential voltage BST−V
SW
13.2 −0.3
V
COMP COMP 5.5 −0.3
V
Feedback FB 5.5 −0.3 V
High−Side Driver Output HSDR 40 −0.3 V
Low−Side Driver Output LSDR 13.2 −0.3 V
Main Supply Voltage Input V
CC
40 −0.3 V
Switch Node Voltage V
SW
40 −0.6 V
Maximum Average Current
V
CC
, BST, HSDRV, LSDRV, V
SW
, GND
I
max
130
mA
Operating Junction Temperature Range (Note 1) T
J
−40 to +140 °C
Maximum Junction Temperature T
J(MAX)
+150 °C
Storage Temperature Range T
stg
−55 to +150 °C
Thermal Characteristics − SOIC−8 Plastic Package (Note 2)
Thermal Resistance Junction−to−Air (Note 3)
R
q
JA
110
165
°C/W
Lead Temperature Soldering (10 sec): Reflow (SMD styles only) Pb−Free
(Note 4)
R
F
260 Peak °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The maximum package power dissipation limit must not be exceeded.
P
D
+
T
J(max)
* T
A
R
qJA
2. When mounted on minimum recommended FR−4 or G−10 board.
3. The value of qJA is measured with the device mounted on minimum footprint, in still air environment with T
A
= 25°C. The value in any given
application depends on the user’s specific board design.
4. 60−180 seconds minimum above 237°C.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

NCV3030ADR2G

Mfr. #:
Buy NCV3030ADR2G
Manufacturer:
ON Semiconductor
Description:
Switching Controllers PWM CONTROLLER
Lifecycle:
New from this manufacturer.
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