IXTQ130N15T

© 2007 IXYS CORPORATION, All rights reserved
DS99796 (02/07)
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C 150 V
V
DGR
T
J
= 25°C to 175°C; R
GS
= 1 MΩ 150 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C 130 A
I
LRMS
Lead Current Limit, RMS 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
330 A
I
AR
T
C
= 25°C 5 A
E
AS
T
C
= 25°C 1.2 J
dv/dt I
S
I
DM
, di/dt 100 A/ms, V
DD
V
DSS
3 V/ns
T
J
175°C, R
G
= 2.5 Ω
P
D
T
C
= 25°C 750 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 seconds 260 °C
M
d
Mounting torque 1.13 / 10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 μA 150 V
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA 2.5 4.5 V
I
GSS
V
GS
= ± 20 V, V
DS
= 0 V ± 200 nA
I
DSS
V
DS
= V
DSS
5 μA
V
GS
= 0 V T
J
= 150°C 250 μA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
, Notes 1, 2 10 12 mΩ
TrenchHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH130N15T
IXTQ130N15T
V
DSS
= 150 V
I
D25
= 130 A
R
DS(on)
12 m
ΩΩ
ΩΩ
Ω
TO-3P (IXTQ)
G
D
S
TO-247 (IXTH)
G
S
D
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Preliminary Technical Information
Features
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
175 °C Operating Temperature
Advantages
z
Easy to mount
z
Space savings
z
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH130N15T
IXTQ130N15T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 60 A, Note 1 60 100 S
C
iss
9800 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1450 pF
C
rss
320 pF
t
d(on)
Resistive Switching Times 23 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
16 ns
t
d(off)
R
G
= 2.5 Ω (External) 57 ns
t
f
27 ns
Q
g(on)
113 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
32 nC
Q
gd
31 nC
R
thJC
0.20 °C/W
R
thCS
0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0 V 130 A
I
SM
Pulse width limited by T
JM
330 A
V
SD
I
F
= 50 A, V
GS
= 0 V, Note 1 1.2 V
t
rr
I
F
= 50 A, -di/dt = 100 A/μs 100 ns
V
R
= 25 V, V
GS
= 0 V
Notes: 1. Pulse test, t 300 ms, duty cycle, d 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-247AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
© 2007 IXYS CORPORATION, All rights reserved
IXTH130N15T
IXTQ130N15T
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
0 2 4 6 8 10 12 14 16
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 65A Value
vs. Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 130A
I
D
= 65A
Fig. 5. R
DS(on)
Normalized to I
D
= 65A Value
vs. Drain Current
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 50 100 150 200 250 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit

IXTQ130N15T

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 150V 130A TO-3P
Lifecycle:
New from this manufacturer.
Delivery:
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