© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_130N15T (7W) 01-31-07.xls
IXTH130N15T
IXTQ130N15T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
11
12
13
14
15
16
17
60 70 80 90 100 110 120 130
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 2.5
Ω
V
GS
= 15V
V
DS
= 75V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
11
13
15
17
19
21
23
25
2345678910
R
G
- Ohms
t
r
- Nanoseconds
22
23
24
25
26
27
28
29
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 75V
I
D
= 130A
I
D
= 65A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
14
16
18
20
22
24
26
28
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
45
50
55
60
65
70
75
80
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2.5
Ω
, V
GS
= 15V
V
DS
= 75V
I
D
= 130A
I
D
= 65A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
14
16
18
20
22
24
26
28
60 70 80 90 100 110 120 130
I
D
- Amperes
t
f
- Nanoseconds
40
44
48
52
56
60
64
68
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2.5
Ω
, V
GS
= 15V
V
DS
= 75V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
11
12
13
14
15
16
17
18
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2.5
Ω
V
GS
= 15V
V
DS
= 75V
65A < I
D
< 130A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
10
15
20
25
30
35
40
45
50
55
60
2345678910
R
G
- Ohms
t
f
- Nanoseconds
20
40
60
80
100
120
140
160
180
200
220
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 75V
I
D
= 65A, 130A
