Document #: 38-05486 Rev. *H Page 4 of 16
Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground
potential..............................–0.3 V to 3.6 V (V
CCmax
+ 0.3 V)
DC voltage applied to outputs
in High Z state
[3, 4]
..............–0.3 V to 3.6 V (V
CCmax
+ 0.3 V)
DC input voltage
[3, 4]
0.3 V to 3.6 V (V
CCmax
+ 0.3 V)
Output current into outputs (LOW) ..............................20 mA
Static discharge voltage.......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up current..................................................... > 200 mA
Notes
3. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
4. V
IH(max)
= V
CC
+0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100 s ramp time from 0 to V
cc
(min) and 200 s wait time after V
cc
stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
7. Chip enable (CE
) needs to be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Operating Range
Device Range
Ambient
Temperature
V
CC
[5]
CY62126EV30LL Industrial –40 °C to +85 °C 2.2 V to
3.6 V
Automotive –40 °C to +125 °C
Electrical Characteristics
(Over the Operating Range)
Parameter Description Test Conditions
45 ns (Industrial) 55 ns (Automotive)
Unit
Min Typ
[6]
Max Min Typ
[6]
Max
V
OH
Output high voltage I
OH
= –0.1 mA 2.0 – – 2.0 – – V
I
OH
= –1.0 mA, V
CC
> 2.70V 2.4 – – 2.4 – – V
V
OL
Output low voltage I
OL
= 0.1 mA – – 0.4 – 0.4 V
I
OL
= 2.1mA, V
CC
> 2.70V – – 0.4 – – 0.4 V
V
IH
Input high voltage V
CC
= 2.2 V to 2.7 V 1.8 – V
CC
+ 0.3 1.8 – V
CC
+ 0.3 V
V
CC
= 2.7 V to 3.6 V 2.2 – V
CC
+ 0.3 2.2 – V
CC
+ 0.3 V
V
IL
Input low voltage V
CC
= 2.2 V to 2.7 V –0.3 – 0.6 –0.3 – 0.6 V
V
CC
= 2.7 V to 3.6 V –0.3 – 0.8 –0.3 – 0.8 V
I
IX
Input leakage current GND < V
I
< V
CC
–1 – +1 –4 – +4 A
I
OZ
Output leakage current GND < V
O
< V
CC
, Output Disabled –1 – +1 –4 – +4 A
I
CC
V
CC
operating supply
current
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
11 16 – 11 35 mA
f = 1 MHz – 1.3 2.0 – 1.3 4.0
I
SB1
Automatic CE power
down current —CMOS
inputs
CE > V
CC
0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V)
f = f
max
(Address and Data Only),
f = 0 (OE
, BHE, BLE and WE),
V
CC
= 3.60V
–1 4 –1 35 A
I
SB2
[7]
Automatic CE power
down current —CMOS
inputs
CE > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= 3.60V
–1 4 –1 30 A
