CY62126EV30 MoBL
Document #: 38-05486 Rev. *H Page 7 of 16
Switching Characteristics
Over the Operating Range
[11, 12]
Parameter Description
45 ns (Industrial) 55 ns (Automotive)
Unit
Min Max Min Max
Read Cycle
t
RC
Read cycle time 45 55 ns
t
AA
Address to data valid 45 55 ns
t
OHA
Data hold from address change 10 10 ns
t
ACE
CE LOW to data valid
45
55 ns
t
DOE
OE LOW to data valid
22
25 ns
t
LZOE
OE LOW to Low Z
[13]
5
5
ns
t
HZOE
OE HIGH to High Z
[13, 14]
18
20 ns
t
LZCE
CE LOW to Low Z
[13]
10
10
ns
t
HZCE
CE HIGH to High Z
[13, 14]
18
20 ns
t
PU
CE LOW to power up 0
0
ns
t
PD
CE HIGH to power down
45
55 ns
t
DBE
BHE / BLE LOW to data valid
22
25 ns
t
LZBE
BHE / BLE LOW to Low Z
[13]
5
5
ns
t
HZBE
BHE / BLE HIGH to High Z
[13, 14]
18
20 ns
Write Cycle
[15]
t
WC
Write cycle time 45 55 ns
t
SCE
CE LOW to write end 35
40
ns
t
AW
Address setup to write end 35 40 ns
t
HA
Address hold from write end 0 0 ns
t
SA
Address setup to write start 0 0 ns
t
PWE
WE pulse width 35
40
ns
t
BW
BHE / BLE pulse width 35
40
ns
t
SD
Data setup to write end 25 25 ns
t
HD
Data hold from write end 0 0 ns
t
HZWE
WE LOW to High Z
[13, 14]
18
20 ns
t
LZWE
WE HIGH to Low Z
[13]
10
10
ns
Notes
11. Test conditions assume signal transition time of 3 ns or less, timing reference levels of V
CC(typ)
/2, input pulse levels of 0 to V
CC(typ)
, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
12. AC timing parameters are subject to byte enable signals (BHE
or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.
13. At any temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any device.
14. t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the outputs enter a high impedance state.
15. The internal write time of the memory is defined by the overlap of WE
, CE
= V
IL
, BHE, BLE or both = V
IL
. All signals must be active to initiate a write and any of these
signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write.
CY62126EV30 MoBL
Document #: 38-05486 Rev. *H Page 8 of 16
Switching Waveforms
Figure 5. Read Cycle No. 1(Address transition controlled)
[16, 17]
Figure 6. Read Cycle No. 2 (OE controlled)
[17, 18]
PREVIOUS DATA VALID DATA VALID
t
RC
t
AA
t
OHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
LZBE
t
LZCE
t
PU
HIGH IMPEDANCE
I
CC
t
HZOE
t
HZCE
t
PD
t
HZBE
t
LZOE
t
DBE
t
DOE
IMPEDANCE
HIGH
I
SB
DATA OUT
OE
CE
V
CC
SUPPLY
CURRENT
BHE
/BLE
ADDRESS
Notes
16. The device is continuously selected. OE
, CE
= V
IL
, BHE, BLE, or both = V
IL
.
17. WE
is high for read cycle.
18. Address valid before or similar to CE
and BHE, BLE transition LOW.
CY62126EV30 MoBL
Document #: 38-05486 Rev. *H Page 9 of 16
Figure 7. Write Cycle No. 1 (WE
controlled)
[19, 20, 21]
Figure 8. Write Cycle No. 2 (CE controlled)
[
19
, 20, 21]
Switching Waveforms (continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
t
HZOE
DATA
IN
NOTE 22
t
BW
t
SCE
DATA I/O
ADDRESS
CE
WE
OE
BHE/BLE
t
HD
t
SD
t
PWE
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
t
BW
t
SA
CE
ADDRESS
WE
DATA I/O
OE
BHE/BLE
NOTE 22
Notes
19. The internal write time of the memory is defined by the overlap of WE
, CE
= V
IL
, BHE, BLE or both = V
IL
. All signals must be active to initiate a write and any of
these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write.
20. Data I/O is high impedance if OE
= V
IH
.
21. If CE
goes high simultaneously with WE = V
IH
, the output remains in a high impedance state.
22. During this period, the I/Os are in output state. Do not apply input signals.

CY62126EV30LL-55ZSXE

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 1Mb 3V 55ns 64K x 16 LP SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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