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SQD19P06-60L_T4GE3

P1-P3P4-P6P7-P9P10-P10
SQD19P06-60L
www.vishay.com
Vishay Siliconix
S11-2065-Rev. C, 24-Oct-11
1
Document Number: 65158
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualified
d
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) - 60
R
DS(on)
() at V
GS
= - 10 V 0.055
R
DS(on)
() at V
GS
= - 4.5 V 0.100
I
D
(A) - 20
Configuration Single
S
G
D
P-Channel MOSFET
TO-252
SGD
Top View
Drain Connected to Tab
ORDERING INFORMATION
Package TO-252
Lead (Pb)-free and Halogen-free SQD19P06-60L-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
- 20
A
T
C
= 125 °C - 11
Continuous Source Current (Diode Conduction)
a
I
S
- 25
Pulsed Drain Current
b
I
DM
- 80
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 24
Single Pulse Avalanche Energy E
AS
28 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
46
W
T
C
= 125 °C 15
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
50
°C/W
Junction-to-Case (Drain) R
thJC
3.2
SQD19P06-60L
www.vishay.com
Vishay Siliconix
S11-2065-Rev. C, 24-Oct-11
2
Document Number: 65158
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 μA - 60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 1.5 - - 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= - 60 V - - - 1
μA V
GS
= 0 V V
DS
= - 60 V, T
J
= 125 °C - - - 50
V
GS
= 0 V V
DS
= - 60 V, T
J
= 175 °C - - - 150
On-State Drain Current
a
I
D(on)
V
GS
= - 10 V V
DS
- 5 V - 20 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V I
D
= - 19 A - 0.046 0.055
V
GS
= - 10 V I
D
= - 19 A, T
J
= 125 °C - - 0.095
V
GS
= - 10 V I
D
= - 19 A, T
J
= 175 °C - - 0.125
V
GS
= - 4.5 V I
D
= - 10 A - 0.075 0.100
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 17 A - 20 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= - 25 V, f = 1 MHz
- 1192 1490
pF Output Capacitance C
oss
- 160 200
Reverse Transfer Capacitance C
rss
- 96 120
Total Gate Charge
c
Q
g
V
GS
= - 10 V V
DS
= - 30 V, I
D
= - 19 A
-2741
nC Gate-Source Charge
c
Q
gs
-3.9-
Gate-Drain Charge
c
Q
gd
-5.9-
Gate Resistance R
g
f = 1 MHz 2.3 4.7 7.1
Turn-On Delay Time
c
t
d(on)
V
DD
= - 30 V, R
L
= 1.6
I
D
- 19 A, V
GEN
= - 10 V, R
g
= 1
-711
ns
Rise Time
c
t
r
-914
Turn-Off Delay Time
c
t
d(off)
-2538
Fall Time
c
t
f
-1218
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--- 80A
Forward Voltage V
SD
I
F
= - 10 A, V
GS
= 0 V - - 0.85 - 1.5 V
SQD19P06-60L
www.vishay.com
Vishay Siliconix
S11-2065-Rev. C, 24-Oct-11
3
Document Number: 65158
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0 3 6 9 12 15
V
DS
-)V( egatloV ecruoS-ot-niarD
V
GS
= 10 V thru 5 V
= 4 V
I
D
- Drain Current (A)
V
GS
=2V,1V
V
GS
= 3 V
V
GS
V
GS
- Gate-to-Source Voltage (V)
- Transconductance (S)g
fs
0
5
10
15
20
25
0 5 10 15 20 25
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0 102030405060
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
iss
C
oss
C
rss
0
500
1000
1500
2000
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
6
12
18
24
30
0246810
T
C
=- 55 °C
T
C
= 125 °C
T
C
= 25 °C
- On-Resistance (Ω)
I
D
- Drain Current (A)
R
DS(on)
0
0.05
0.10
0.15
0.20
0.25
0 6 12 18 24 30
V
GS
=10V
V
GS
=4.5V
0
2
4
6
8
10
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0 5 10 15 20 25 30
I
D
=19A
V
DS
=30V
P1-P3P4-P6P7-P9P10-P10

SQD19P06-60L_T4GE3

Mfr. #:
Buy SQD19P06-60L_T4GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -60V Vds TO-252 AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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