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SQD19P06-60L_T4GE3

P1-P3P4-P6P7-P9P10-P10
SQD19P06-60L
www.vishay.com
Vishay Siliconix
S11-2065-Rev. C, 24-Oct-11
4
Document Number: 65158
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
0.8
1.1
1.4
1.7
2.0
2.3
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
I
D
=10A
V
GS
=10V
0.0
0.1
0.2
0.3
0.4
0.5
0246810
T
J
= 25 °C
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
- 0.5
- 0.2
0.1
0.4
0.7
1.0
- 50 - 25 0 25 50 75 100 125 150 175
I
D
=5mA
I
D
= 250 µA
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
- 80
- 76
- 72
- 68
- 64
- 60
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 10 mA
SQD19P06-60L
www.vishay.com
Vishay Siliconix
S11-2065-Rev. C, 24-Oct-11
5
Document Number: 65158
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
-
Drain Current (A)I
D
T
C
= 25 °C
Single Pulse
1 ms
100 ms, 1 s, 10 s, DC
100 µs
R
DS(on)*
Limited by
10 ms
0.01
0.1
1
10
100
0.01 0.1 1 10 100
BVDSS Limited
I
DM
Limited
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
10
Normalized Effective Transient
Thermal Impedance
1000
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1001
SQD19P06-60L
www.vishay.com
Vishay Siliconix
S11-2065-Rev. C, 24-Oct-11
6
Document Number: 65158
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65158
.
P1-P3P4-P6P7-P9P10-P10

SQD19P06-60L_T4GE3

Mfr. #:
Buy SQD19P06-60L_T4GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -60V Vds TO-252 AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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