74HC132
http://onsemi.com
3
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage 0.5 to 7.0 V
V
IN
Digital Input Voltage 0.5 to 7.0 V
V
OUT
DC Output Voltage Output in 3−State
High or Low State
0.5 to 7.0
0.5 to V
CC
0.5
V
I
IK
Input Diode Current 20 mA
I
OK
Output Diode Current 20 mA
I
OUT
DC Output Current, per Pin 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins 75 mA
I
GND
DC Ground Current per Ground Pin 75 mA
T
STG
Storage Temperature Range 65 to 150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260
_C
T
J
Junction Temperature Under Bias 150
_C
q
JA
Thermal Resistance 14−SOIC
14−TSSOP
125
170
_C/W
P
D
Power Dissipation in Still Air at 85_C SOIC
TSSOP
500
450
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 30% − 35% UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
2000
200
V
I
Latchup
Latchup Performance Above V
CC
and Below GND at 85_C (Note 3)
300 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to EIA/JESD78.
4. For high frequency or heavy load considerations, see Chapter 2the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types 55 125
_C
t
r
, t
f
Input Rise and Fall Time (Figure 3) − No Limit
(Note 5)
ns
5. When V
IN
0.5 V
CC
, I
CC
>> quiescent current.
6. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.
