74HC132DR2G

74HC132
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4
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
V
CC
Guaranteed Limit
Symbol Parameter Test Conditions (V)
*55_C to 25_C 85_C 125_C
Unit
V
T+
max Maximum PositiveGoing
Input Threshold Voltage
(Figure 5)
V
OUT
= 0.1 V
|I
OUT
| 20 mA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
T+
min Minimum PositiveGoing
Input Threshold Voltage
(Figure 5)
V
OUT
= 0.1 V
|I
OUT
| 20 mA
2.0
4.5
6.0
1.0
2.3
3.0
0.95
2.25
2.95
0.95
2.25
2.95
V
V
T–
max Maximum NegativeGoing
Input Threshold Voltage
(Figure 5)
V
OUT
= V
CC
– 0.1 V
|I
OUT
| 20 mA
2.0
4.5
6.0
0.9
2.0
2.6
0.95
2.05
2.65
0.95
2.05
2.65
V
V
T–
min Minimum NegativeGoing
Input Threshold Voltage
(Figure 5)
V
OUT
= V
CC
– 0.1 V
|I
OUT
| 20 mA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
H
max
(Note 7)
Maximum Hysteresis
Voltage
(Figure 5)
V
OUT
= 0.1 V or V
CC
– 0.1 V
|I
OUT
| 20 mA
2.0
4.5
6.0
1.2
2.25
3.0
1.2
2.25
3.0
1.2
2.25
3.0
V
V
H
min
(Note 7)
Minimum Hysteresis
Voltage
(Figure 5)
V
OUT
= 0.1 V or V
CC
– 0.1 V
|I
OUT
| 20 mA
2.0
4.5
6.0
0.2
0.4
0.5
0.2
0.4
0.5
0.2
0.4
0.5
V
V
OH
Minimum HighLevel
Output Voltage
V
IN
V
T
min or V
T+
max
|I
OUT
| 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
IN
V
T
min or V
T+
max
|I
OUT
| 4.0 mA
|I
OUT
| 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum LowLevel
Output Voltage
V
IN
V
T+
max
|I
OUT
| 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
V
T+
max |I
OUT
| 4.0 mA
|I
OUT
| 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
IN
Maximum Input Leakage
Current
V
IN
= V
CC
or GND 6.0 0.1 1.0 1.0
mA
I
CC
Maximum Quiescent
Supply Current
(per Package)
V
IN
= V
CC
or GND
I
OUT
= 0 mA
6.0 2.0 20 40
mA
7. V
H
min (V
T+
min) (V
T
max); V
H
max = (V
T+
max) (V
T
min).
8. Information on typical parametric values can be found in the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
74HC132
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5
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6.0 ns)
V
CC
Guaranteed Limit
Symbol Parameter (V)
*55_C to 25_C 85_C 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 3 and 4)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 3 and 4)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
C
in
Maximum Input Capacitance 10 10 10 pF
9. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor HighSpeed
CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (per Gate) (Note 10) 24 pF
10.Used to determine the noload dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
. For load considerations, see the ON
Semiconductor HighSpeed CMOS Data Book (DL129/D).
Figure 3. Switching Waveforms
t
r
V
CC
GND
90%
50%
10%
90%
50%
10%
INPUT
A OR B
Y
t
PHL
t
PLH
t
THL
t
TLH
*Includes all probe and jig capacitance
Figure 4. Test Circuit
C
L
*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
t
f
74HC132
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6
Figure 5. Typical Input Threshold, V
T+
, V
T
Versus Power Supply Voltage
Figure 6. Typical SchmittTrigger Applications
4
3
2
1
23456
V
CC
, POWER SUPPLY VOLTAGE (VOLTS)
V
H
typ
V
H
typ = (V
T+
typ) − (V
T−
typ)
(a)A SCHMITT TRIGGER SQUARES UP INPUTS
(a)WITH SLOW RISE AND FALL TIMES
(b)A SCHMITT TRIGGER OFFERS MAXIMUM
NOISE IMMUNITY
V
IN
V
OUT
V
H
V
CC
V
T+
V
T−
GND
V
OH
V
OL
V
IN
V
H
V
OUT
V
CC
V
T+
V
T−
GND
V
OH
V
OL
V
CC
V
IN
V
OUT
V
T
, TYPICAL INPUT THRESHOLD VOLTAGE
(VOLTS)

74HC132DR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Logic Gates QUAD 2 INPUT NAND GATE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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