© 2011 IXYS All rights reserved
1 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
V
DSS
= 55 V
I
D25
= 150 A
R
DSon typ.
= 2.7 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
S2
L-
L1
L2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L+
Symbol Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
1)
on chip level at T
J
= 25°C
V
GS
= 10 V ; I
D
= 100 A T
J
= 125°C
2.7
4.5
3.3 mW
mW
V
GS(th)
V
DS
= 20 V; I
D
= 1 mA 2.5 4.5 V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V T
J
= 25°C
T
J
= 125°C 0.1
1 µA
mA
I
GSS
V
GS
=
±
20 V; V
DS
= 0 V 0.2 µA
Q
g
Q
gs
Q
gd
V
GS
= 10 V; V
DS
= 12 V; I
D
= 160 A
105
tbd
tbd
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
inductive load
V
GS
= 10 V; V
DS
= 24 V
I
D
= 100 A; R
G
= 39 Ω;
T
J
= 125°C
140
125
550
120
ns
ns
ns
ns
E
on
E
off
E
recoff
0.17
0.60
0.004
mJ
mJ
mJ
R
thJC
R
thJH
with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
1)
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
MOSFETs
Symbol Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 55 V
V
GS
±
20 V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
150
115
A
A
I
F25
I
F90
T
C
= 25°C (diode)
T
C
= 90°C (diode)
120
75
A
A
Surface Mount DeviceStraight leads
Recommended replacements: MTI 120W55GA / MTI 120W55GC
