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GWM160-0055X1-SL

P1-P3P4-P6
© 2011 IXYS All rights reserved
4 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
-25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
0.0
1.5
3.0
4.5
6.0
7.5
V
DS
[V]
0 1 2 3 4 5 6
I
D
[A]
0
50
100
150
200
250
300
350
V
DS
[V]
0 1 2 3 4 5 6
I
D
[A]
0
50
100
150
200
250
300
350
V
GS
[V]
3 4 5 6 7 8
I
D
- [A]
0
50
100
150
200
250
300
350
5.5 V
7 V
-25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
T
J
[°C]
T
J
= 125°C
T
J
= 25°C
7 V
6.5 V
6 V
I
D
[A]
0 50 100 150 200 250 300 350
R
DS(ON)
- normalized
0.5
1.0
1.5
2.0
2.5
3.0
10 V
15 V
5 V
5.5 V
5 V
6.5 V
R
DS(on)
normalized
R
DS(on)
R
DS(on)
[m
Ω
]
T
J
[°C]
5.5 V5 V 6 V 6.5 V 7 V
20 V
10 V
V
GS
=
20 V
15 V
V
DSS
[V] normalized
10 V
V
GS
=
20 V
15 V
V
GS
= 10 V
I
D
= 160 A
T
J
= 125°C
V
GS
=
I
DSS
= 0.25 mA
T
J
= 125°C
T
J
= 25°C
6 V
R
DS(on)
normalized
V
DS
= 24 V
Fig. 1 Drain source breakdown voltage V
DSS
vs. junction temperature T
J
Fig. 2 Typical transfer characteristic
Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic
Fig. 5 Drain source on-state resistance R
DS(on)
versus junction temperature T
J
Fig. 6 Drain source on-state
resistance R
DS(on)
versus I
D
p h a s e - o u t
© 2011 IXYS All rights reserved
5 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
Q
G
[nC]
0 20 40 60 80 100 120 140 160
I
D
- [A]
0
2
4
6
8
10
12
t
r
V
GS
[V]
0 20 40 60 80 100 120 140 160 180
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160 180
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
200
400
600
800
1000
1200
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
150
300
450
600
750
900
1050
1200
1350
1500
1650
T
C
[°C]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
200
E
on
, E
rec(off)
[mJ]
I
D
[A]
I
D
[A]
t [ns]
E
off
t
f
t
d(off)
t [ns]
E
on
, E
rec(off)
[mJ]
t [ns]
t
r
R
G
[Ω]
E
off
[mJ]
t [ns]
R
G
[Ω]
E
off
t
d(off)
t
f
E
off
[mJ]
V
DS
= 12 V
V
DS
= 40 V
I
D
= 160 A
T
J
= 25°C
V
DS
= 24 V
V
GS
= +10/0 V
R
G
= 39 Ω
T
J
= 125°C
V
DS
= 24 V
V
GS
= +10/0 V
R
G
= 39 Ω
T
J
= 125°C
V
DS
= 24 V
V
GS
= +10/0 V
I
D
= 160 A
T
J
= 125°C
V
DS
= 24 V
V
GS
= +10/0 V
I
D
= 160 A
T
J
= 125°C
t
d(on)
E
on
E
rec(off)
x10
E
on
t
d(on)
E
rec(off)
x10
T
J
= 175°C
Fig.7 Gate charge characteristic Fig. 8 Drain current I
D
vs. case temperature T
C
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
p h a s e - o u t
© 2011 IXYS All rights reserved
6 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
-di
F
/dt [A/µs]
200 400 600 800 1000 1200
I
RM
[A]
0
5
10
15
20
25
30
-di
F
/dt [A/µs]
200 400 600 800 1000 1200
t
rr
[ns]
0
10
20
30
40
50
V
SD
[V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
F
[A]
0
50
100
150
200
250
300
350
-di
F
/dt [A/µs]
200 400 600 800 1000 1200
Q
rr
[µC]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
t [ms]
1 10 100 1000 10000
Thermal Response [K/W]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
R
= 24 V
T
J
= 125°C
V
R
= 24 V
T
J
= 125°C
V
GS
= 0 V
V
R
= 24 V
T
J
= 125°C
T
J
= -25°C
25°C
125°C
150°C
160 A
100 A
I
F
= 50 A
160 A
100 A
I
F
= 50 A
160 A
100 A
I
F
= 50 A
GWM 160-0055X1
Fig. 13 Reverse recovery time t
rr
of the body diode vs. di/dt
Fig. 14 Reverse recovery current I
RM
of the body diode vs. di/dt
Fig. 15 Reverse recovery charge Q
rr
of the body diode vs. di/dt
Fig. 16 Source drain diode current I
F
vs.
source drain voltage V
SD
(body diode)
Fig. 17 Definition of switching times Fig. 18 Typ. thermal impedance junction to
heatsink Z
thJH
with heat transfer paste
0.9 V
GS
0.1 V
GS
0.9 I
D
0.9 I
D
0.1 I
D
V
GS
V
DS
I
D
0.1 I
D
t
t
t
r
t
f
t
d(on)
t
d(off)
p h a s e - o u t
P1-P3P4-P6

GWM160-0055X1-SL

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MOSFET 6N-CH 55V 150A ISOPLUS
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