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NTMFS4C020NT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
July, 2018 − Rev. 1
1 Publication Order Number:
NTMFS4C020N/D
NTMFS4C020N
Power MOSFET
30 V, 0.9 mW, 303 A, Single N−Channel,
SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain Cur-
rent R
q
JC
(Notes 1, 3)
Steady
State
T
C
= 25°C I
D
303 A
Power Dissipation R
q
JC
(Notes 1, 3)
T
C
= 25°C P
D
134 W
Continuous Drain Cur-
rent R
q
JA
(Notes 1, 2, 3)
Steady
State
T
A
= 25°C I
D
47 A
Power Dissipation R
q
JA
(Notes 1, 2, 3)
T
A
= 25°C P
D
3.2 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
552 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
110 A
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 35 A)
E
AS
862 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
R
q
JC
0.93
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
www.onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4C020N
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
0.7 mW @ 10 V
303 A
1.0 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4C020NT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C020NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4C020N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
16.3
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 °C 1
mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.3 2.2 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.8 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 30 A 0.6 0.7
mW
V
GS
= 4.5 V I
D
= 30 A 0.8 1.0
Forward Transconductance g
FS
V
DS
= 3 V I
D
= 30 A 183 S
Gate Resistance R
G
T
A
= 25 °C 1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
10144
pF
Output Capacitance C
OSS
5073
Reverse Transfer Capacitance C
RSS
148
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
63
nC
Threshold Gate Charge Q
G(TH)
18
Gate−to−Source Charge Q
GS
29
Gate−to−Drain Charge Q
GD
13
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
139
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0 W
29
ns
Rise Time t
r
68
Turn−Off Delay Time t
d(OFF)
53
Fall Time t
f
36
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.73 1.1
V
T
J
= 125°C 0.55
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
87
ns
Charge Time t
a
43
Discharge Time t
b
44
Reverse Recovery Charge Q
RR
147 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTMFS4C020N
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
2.8 V
3.0 V
3.2 V
3.4 V
3.6 V
V
GS
= 2.6 V
V
DS
= 3 V
T
J
= 25°C
T
J
= −55°C
T
J
= 150°C
I
D
= 30 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
T
J
= 25°C
V
GS
= 10 V
V
GS
= 4.5 V
T
J
= 25°C
0
50
100
150
200
250
300
350
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0
4.5 V
10 V
0
50
100
150
200
250
300
350
400
1.5 2 2.5 3 3.5 4
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
345678910
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0 50 100 150 200 250 300 350 400
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
1251007550250−25−50
0.6
0.8
1.4
1.8
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
1.0
1.2
1.6
V
GS
= 10 V
I
D
= 30 A
150
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
T
J
= 85°C
T
J
= 125°C
T
J
= 100°C
10
100
1000
10000
100000
0 5 10 15 20 25 30
P1-P3P4-P6

NTMFS4C020NT3G

Mfr. #:
Buy NTMFS4C020NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET TRENCH 6 30V NCH
Lifecycle:
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