NTMFS4C020NT3G

NTMFS4C020N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10.1
10
100
1k
10k
100k
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Q
G
, TOTAL GATE CHARGE (nC)
R
G
, GATE RESISTANCE (W)
140200
0
1
6
12
1001010.1
10
1000
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
10 100
100
Q
T
V
DS
= 15 V
I
D
= 30 A
T
J
= 25°C
Q
GS
Q
GD
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
RSS
C
OSS
C
ISS
40 60 80 100 120
2
3
4
5
11
7
8
9
10
V
DS
V
GS
0
6
3
18
9
12
15
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 4.5 V
V
DD
= 15 V
I
D
= 15 A
t
d(off)
t
d(on)
t
r
t
f
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.00.80.60.40.3
0.1
1
10
100
1000
I
S
, SOURCE CURRENT (A)
0.5 0.7 0.9
T
J
= 25°C
T
J
= −55°C
T
J
= 150°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
1
10
100
1000
I
D
, DRAIN CURRENT (A)
R
DS(on)
Limit
Thermal Limit
Package Limit
10 ms
100 ms
1 ms
10 ms
V
GS
10 V
T
C
= 25°C
NTMFS4C020N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 12. Thermal Impedance (Junction−to−Ambient)
t, TIME (s)
0.010.0010.00010.000010.000001
0.001
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
R
q
JA
= Steady State = 39°C/W
P
CB
Cu Area = 650 mm2
P
CB
Cu Thk = 2 oz
Figure 13. Avalanche Characteristics
TIME IN AVALANCHE (s)
1.00E−021.00E−03
I
PEAK
, (A)
1.00E−04
1000
T
J(initial)
= 25°C
T
J(initial)
= 100°C
100
10
1
NTMFS4C020N
www.onsemi.com
6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
4X
4X
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
M 3.00 3.40
q 0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
D1 4.70 4.90
D2 3.80 4.00
E 6.15
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 c
L
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
M
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
e
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NTMFS4C020NT3G

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ON Semiconductor
Description:
MOSFET TRENCH 6 30V NCH
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