C-126
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 110 170 I
C
= 39A
Q
ge
Gate - Emitter Charge (turn-on) — 20 30 nC V
CC
= 400V
Q
gc
Gate - Collector Charge (turn-on) — 50 75 See Fig. 8
t
d(on)
Turn-On Delay Time — 70 — T
J
= 25°C
t
r
Rise Time — 110 — ns I
C
= 39A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 400 600 V
GE
= 15V, R
G
= 5.0Ω
t
f
Fall Time — 290 400 Energy losses include "tail" and
E
on
Turn-On Switching Loss — 2.5 — diode reverse recovery.
E
off
Turn-Off Switching Loss — 6.0 — mJ See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss — 8.5 13
t
d(on)
Turn-On Delay Time — 68 — T
J
= 150°C, See Fig. 9, 10, 11, 18
t
r
Rise Time — 100 — ns I
C
= 39A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 760 — V
GE
= 15V, R
G
= 5.0Ω
t
f
Fall Time — 520 — Energy losses include "tail" and
E
ts
Total Switching Loss — 14 — mJ diode reverse recovery.
L
E
Internal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies
Input Capacitance — 3000 — V
GE
= 0V
C
oes
Output Capacitance — 340 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 40 — ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time — 50 75 ns T
J
= 25°C See Fig.
— 105 160 T
J
= 125°C 14 I
F
= 25A
I
rr
Diode Peak Reverse Recovery Current — 4.5 10 A T
J
= 25°C See Fig.
— 8.0 15 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge — 112 375 nC T
J
= 25°C See Fig.
— 420 1200 T
J
= 125°C 16 di/dt = 200A/µs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs T
J
= 25°C See Fig.
During t
b
— 160 — T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temp. Coeff. of Breakdown Voltage — 0.62 — V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.6 1.7 I
C
= 39A V
GE
= 15V
— 2.0 — V I
C
= 70A See Fig. 2, 5
— 1.7 — I
C
= 39A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 5.5 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -14 — mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 21 24 — S V
CE
= 100V, I
C
= 39A
I
CES
Zero Gate Voltage Collector Current — — 250 µA V
GE
= 0V, V
CE
= 600V
— — 6500 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 1.3 1.7 V I
C
= 25A See Fig. 13
— 1.2 1.5 I
C
= 25A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
IRGPC50FD2
V
CC
=80%(V
CES
), V
GE
=20V, L=10µH,
R
G
= 5.0Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Notes:
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
