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IRGPC50FD2
P1-P3
P4-P6
P7-P9
C-128
Fig. 5
- Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4
- Maximum Collector Current vs.
Case Temperature
IRGPC50FD2
Fig. 6
- Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0
1
0
2
0
3
0
4
0
5
0
6
0
7
0
2
5
5
0
7
5
1
0
0
1
2
5
1
5
0
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
T
,
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
(
°
C
)
C
V
=
1
5
V
G
E
1
.
0
1
.
5
2
.
0
2
.
5
3
.
0
-
6
0
-
4
0
-
2
0
0
2
0
4
0
6
0
8
0
1
0
0
1
2
0
1
4
0
1
6
0
T
,
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
(
°
C
)
C
C
E
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
te
r
V
o
l
t
a
g
e
(
V
)
V
=
1
5
V
8
0
µ
s
P
U
L
S
E
W
I
D
T
H
G
E
I
=
7
8
A
I
=
3
9
A
I
=
2
0
A
C
C
C
0
.
0
1
0
.
1
1
0
.
0
0
0
0
1
0
.
0
0
0
1
0
.
0
0
1
0
.
0
1
0
.
1
1
1
0
t
,
R
e
c
t
a
n
g
u
l
a
r
P
u
l
s
e
D
u
r
a
t
i
o
n
(
s
e
c
)
1
t
h
J
C
D
=
0
.
5
0
0
.
0
1
0
.
0
2
0
.
0
5
0
.
1
0
0
.
2
0
S
I
N
G
L
E
P
U
L
S
E
(
T
H
E
R
M
A
L
R
E
S
P
O
N
S
E
)
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
D
M
N
o
t
e
s
:
1
.
D
u
t
y
f
a
c
t
o
r
D
=
t
/
t
2
.
P
e
a
k
T
=
P
x
Z
+
T
1
2
J
D
M
t
h
J
C
C
C-129
IRGPC50FD2
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
8.2
8.4
8.6
8.8
9.0
9.2
0
10
20
30
40
50
60
G
Tot
al
Swi
tchi
ng Lo
ss
es
(m
J)
R
,
G
a
t
e
R
e
s
i
s
t
an
c
e
(
Ω
)
A
V
=
480
V
V
=
15
V
T
=
25
°
C
I
=
39
A
CC
G
E
C
C
1
10
100
-60
-40
-20
0
20
40
60
80
100
120
140
160
C
T
,
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
(
°
C
)
Tot
al S
witc
hin
g Los
ses
(
mJ
)
A
R
=
5
.
0
Ω
V
=
15
V
V
=
480
V
G
G
E
CC
I
=
78
A
I
=
39
A
I
=
20
A
C
C
C
0
1
0
0
0
2
0
0
0
3
0
0
0
4
0
0
0
5
0
0
0
6
0
0
0
7
0
0
0
1
1
0
1
0
0
C
E
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
=
0
V
,
f
=
1
M
H
z
C
=
C
+
C
,
C
S
H
O
R
T
E
D
C
=
C
C
=
C
+
C
G
E
i
e
s
ge
g
c
c
e
r
e
s
g
c
oe
s
c
e
g
c
C
i
e
s
C
r
e
s
C
oe
s
0
4
8
1
2
1
6
2
0
0
3
0
6
0
9
0
1
2
0
G
E
V
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
Q
,
T
o
t
a
l
G
a
t
e
C
h
a
r
g
e
(
n
C
)
g
V
=
4
8
0
V
I
=
3
9
A
C
E
C
C-130
Fig. 11 -
Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12
- Turn-Off SOA
Fig. 13
- Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRGPC50FD2
0
10
20
30
40
0
20
40
60
80
C
Tot
al S
witc
hin
g Los
ses
(mJ
)
I
,
C
o
ll
e
c
t
o
r
-
t
o
-
E
m
i
tt
e
r
C
u
rr
en
t
(
A
)
A
R
=
5
Ω
T
=
150
°
C
V
=
480
V
V
=
15
V
G
C
CC
G
E
1
1
0
1
0
0
1
0
0
0
1
1
0
1
0
0
1
0
0
0
C
C
E
G
E
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
S
A
F
E
O
P
E
R
A
T
I
N
G
A
R
E
A
V
=
2
0
V
T
=
1
2
5
°
C
G
E
J
1
10
100
0.6
1.0
1.4
1.8
2.2
2.6
F
M
F
In
sta
n
ta
ne
ou
s
Fo
rwa
rd
Cu
rr
en
t -
I
(A)
F
o
r
w
a
r
d
V
o
l
t
a
g
e
D
r
op
-
V
(
V
)
T
=
1
50
°
C
T
=
1
25
°
C
T
=
25
°
C
J
J
J
P1-P3
P4-P6
P7-P9
IRGPC50FD2
Mfr. #:
Buy IRGPC50FD2
Manufacturer:
Infineon Technologies
Description:
IGBT W/DIODE 600V 70A TO-247AC
Lifecycle:
New from this manufacturer.
Delivery:
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