IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA100N04T2
IXTP100N04T2
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 50A, Note 1 27 45 S
C
iss
2690 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 490 pF
C
rss
105 pF
t
d(on)
12.0 ns
t
r
5.2 ns
t
d(off)
15.8 ns
t
f
6.4 ns
Q
g(on)
25.5 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
8.0 nC
Q
gd
5.7 nC
R
thJC
1.00 C/W
R
thCS
TO-220 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 100 A
I
SM
Repetitive, Pulse Width Limited by T
JM
400 A
V
SD
I
F
= 50A, V
GS
= 0V, Note 1 1.2 V
t
rr
34 ns
I
RM
1.44
A
Q
RM
24.5 nC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
I
F
= 50A, V
GS
= 0V,
-di/dt = 100A/s, V
R
= 20V
Resistive Switching Times
V
GS
= 10V, V
DS
= 20V, I
D
= 50A
R
G
= 5 (External)
Notes: 1. Pulse test, t 300s; duty cycle, d 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E
A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e
c
e1
e1
3X b2
e
3X b
EJECTOR
PIN
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
2
3
4
L3
A2
A1
e
c
e
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
60.12 [3.0]
